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IXTH06N220P3HV

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH06N220P3HV
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 11. Maximum Transient Thermal Impedance
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3
Fig. 7. Transconductance
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
01234567891011
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 1100V
I
D
= 0.3A
I
G
= 10mA
Fig. 10. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
iss
Crss
C
oss
© 2014 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_06N220P3HV(M3) 11-25-14
IXTH06N220P3HV
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 75ºC
0.01
0.1
1
10
100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
1ms
100µs
R
DS(on)
Limi
t
10ms
DC
100ms
25µs
Fig. 12. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
0.01
0.1
1
10
100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
10ms
100µs
R
DS(on)
Limi
t
1ms
DC
25µs
100ms
P1-P3P4-P5

IXTH06N220P3HV

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MOSFET N-CH
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