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2SA1977-A

P1-P3P4-P5
33779ENREBMUN TRAP
EIAJ
1
7791AS2REBMUN DERETSIGER
33ENILTUO EGAKCAP
XAMPYTNIMSTINUSNOITIDNOC DNA SRETEMARAPSLOBMYS
fT Gain Bandwidth Product at VCE = -8 V, IC = -20 mA GHz 6.0 8.5
NF Noise Figure
at VCE = -8 V, IC 0.35.1BdAm 3- =
|S
21E|
2
Insertion Power Gain at VCE = -8 V, IC = -20 mA, f = 1 GHz dB 8.0 12.0
h
FE Forward Current Gain Ratio at VCE = -8 V, IC 0010402Am 02- =
I
CBO Collector Cutoff Current at VCB = -10 V, IE = 0 μ 1.0-A
I
EBO Emitter Cutoff Current at VBE = -1 V, IC = 0 μ 1.0-A
C
RE
2
Feedback Capacitance at VCB = -10 V, IE 1.05.0FpzHM 1 = f ,Am 0 =
P
T 002WmnoitapissiD rewoP latoT
PNP SILICON HIGH FREQUENCY TRANSISTOR
SILICON TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
f
T = 8.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE68133
• HIGH INSERTION POWER GAIN:
|S21E|
2
= 12 dB at 1 GHz
DESCRIPTION
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes:
1. Electronic Industrial Association of Japan.
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE97733
The NE97733 PNP silicon transistor is designed for
ultrahigh speed current mode switching applications and
microwave amplifiers up to 3.5 GHz. The NE97733 offers
excellent performance and reliability at low cost.
33 (SOT 23 STYLE)
NE97733
ABSOLUTE MAXIMUM RATINGS
1
(TA = 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V -20
VCEO Collector to Emitter Voltage V -12
V
EBO Emitter to Base Voltage V -3
I
C Collector Current mA -50
T
J Junction Temperature °C 150
T
STG Storage Temperature °C -65 to +200
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
Total Power Dissipation, P
T
(mW)
Insertion Power Gain, |S
21E
|
2
(dB)
Gain Bandwidth Product, f
T
(GHz)
Collector Current, IC (mA)
Collector Current, IC (mA)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC POWER DERATING CURVES
INSERTION GAIN vs.
FREQUENCY
Ambient Temperature, TA (°C)
Frequency, f (GHz)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain, H
FE
Collector Current, IC (mA)
Insertion Power Gain, |S
21E
|
2
(dB)
V
CE
= -8V
100
50
40
30
20
10
5
4
3
2
1
-0.1
-1.0 -10
-100 -1000
NE97733
FREE AIR
400
300
200
100
0
050
100 150 200
V
CE
= -8 V
I
C
= -20 mA
35
30
25
20
15
10
5
0
-5
-10
-15
0.1 0.2 0.3 0.4 0.5 1.0 2.0 3.0
VCE = -8 V
10
8
6
4
2
0
-1
-10 -100
V
CE
= -8 V
f = 1 GHz
5
10
15
0
-1
-10
100
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE97733
DC CURRENT GAIN VS.
COLLECTOR CURRENT
OUTPUT CAPACITANCE VS.
COLLECTOR TO BASE VOLTAGE
DC Current Gain, H
FE
Collector Current, IC (mA)
Collector Feed-back Capacitance, C
RE
(pF)
Collector to Base Voltage, VCB (V)
V
IN
R
S
V
OUT
R
L1
R
C1
R
C2
R
L2
V
BB
(-)
50 Ω
V
CC
(-)
V
EE
(+)
R
E
Sampling
Oscilloscope
V
OUT
V
IN
20 ns
t
OFF
(delay)
t
ON
(delay)
t
r
t
f
Parameter Symbol
Vin = 1 V
Unit
TYP
Turn-on Delay Time tON (delay) 1.08 ns
Rise Time tr 0.66 ns
Turn-off Delay Time tOFF (delay) 0.32 ns
Fall Time tf 0.78 ns
SWITCHING CHARACTERISTICS
VIN = 1 v, VBB = -0.5 V, RC1 = RC2
RS RC RL1 RL2 RE VEE VCC
(Ω)(Ω)(Ω)(Ω)(Ω) (V) (V)
160 1 K 200 250 2.7 K 27 26.3
SWITCHING TIME MEASUREMENT CIRCUIT
-0.1
-1.0
-10
-100
-1000
1.0
10
20
30
40
50
100
V
CE
= -3 V
V
CE
= -2 V
V
CE
= -1 V
f = 1 MHz
1.5
1
0.5
0
-1
-10
-100
P1-P3P4-P5

2SA1977-A

Mfr. #:
Buy 2SA1977-A
Manufacturer:
CEL
Description:
RF Bipolar Transistors PNP Silicon 8.5GHz NF 1.5dB
Lifecycle:
New from this manufacturer.
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