Electrical characteristics PD85025C
4/10
2 Electrical characteristics
T
CASE
= +25
o
C
2.1 Static
2.2 Dynamic
2.3 ESD protection characteristics
Table 4. Static
Symbol Test conditions Min Typ Max Unit
I
DSS
V
GS
= 0 V V
DS
= 25 V 1 µA
I
GSS
V
GS
= 20 V V
DS
= 0 V 1 µA
V
GS(Q)
V
DS
= 10 V
I
D
= TBD mA TBD V
V
DS(ON)
V
GS
= 10 V I
D
= 1 A 270 310 mV
C
ISS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz 49 pF
C
OSS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz 35 pF
C
RSS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz 1.0 pF
Table 5. Dynamic
Symbol Test conditions Min. Typ. Max. Unit
P3dB V
DD
= 13.6 V, I
DQ
= 300 mA f = 945 MHz 25 30 W
G
P
V
DD
= 13.6 V , I
DQ
= 300 mA, P
OUT
= 10 W, f = 945 MHz 15 17.5 dB
h
D
V
DD
= 13.6 V, I
DQ
= 300 mA, P
OUT
= P3dB, f = 945 MHz 60 73 %
Load
mismatch
V
DD
= 17 V, I
DQ
= 300 mA, P
OUT
= 45 W, f = 945 MHz
All phase angles
20:1 VSWR
Table 6. ESD protection characteristics
Test conditions Class
Human body model 2
Machine model M3
PD85025C Impedance
5/10
3 Impedance
Figure 2. Current conventions
Table 7. Impedance data
Freq. (MHz) Z
IN
()Z
DL
()
945 MHz 1.01 + j 2.03 1.75 + j 2.20
Typical performance PD85025C
6/10
4 Typical performance
Figure 3. Capacitances vs drain voltage Figure 4. DC output characteristics
Figure 5. DC output characteristics Figure 6. DC output characteristic
0
20
40
60
80
100
120
0 1020304050
Vds (V)
Capacitance (pF)
Crss Coss Ciss
Freq = 1 MHz
p
0
1
2
3
4
5
6
024681012
VDS[V]
ID[A]
Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 5.5V Vgs = 6.0V
Tamb = - 40 °C
0
1
2
3
4
5
6
024681012
VDS[V]
ID[A]
Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 5.5V Vgs = 6.0V
Tamb = + 20 °C
0
1
2
3
4
5
6
024681012
VDS[V]
ID[A]
Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 5.5V Vgs = 6.0V
Tamb = + 60 °C

PD85025C

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF Power Trans. LDMOST family
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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