BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
1
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●
Designed for Complementary Use with
BDV65, BDV65A, BDV65B and BDV65C
●
125 W at 25°C Case Temperature
●
12 A Continuous Collector Current
●
Minimum h
FE
of 1000 at 4 V, 5 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤ 0.1 ms, duty cycle ≤ 10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
E
= 0)
BDV64
BDV64A
BDV64B
BDV64C
V
CBO
-60
-80
-100
-120
V
Collector-emitter voltage (I
B
= 0)
BDV64
BDV64A
BDV64B
BDV64C
V
CEO
-60
-80
-100
-120
V
Emitter-base voltage V
EBO
-5 V
Continuous collector current I
C
-12 A
Peak collector current (see Note 1) I
CM
-15 A
Continuous base current I
B
-0.5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
tot
125 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
tot
3.5 W
Operating junction temperature range T
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds T
L
260 °C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
