CREAT BY ART
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Built-in strain relief
- Super fast recovery time for high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 150 200 300 400 500 600 V
V
RMS
35 70 105 140 210 280 350 420 V
V
DC
50 100 150 200 300 400 500 600 V
I
F(AV)
A
t
rr
ns
C
J
pF
T
J
°C
T
STG
°C
Document Number: DS_D1411071 Version: L15
ES2AA - ES2J
Taiwan Semiconductor
2A, 50V - 600V Surface Mount Su
er Fast Rectifiers
FEATURES
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
DO-214AC (SMA)
Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
UNIT
ES
2DA
Case: DO-214AC (SMA)
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
Maximum repetitive peak reverse voltage
PARAMETER SYMBOL
ES
2AA
ES
2BA
ES
2CA
I
FSM
50
ES
2FA
ES
2GA
ES
2HA
ES
2JA
Typical thermal resistance
R
θJL
R
θJA
20
75
V
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 2
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
μA
25 20
°C/W
Operating junction temperature range
A
Maximum instantaneous forward voltage (Note 1)
@ 2 A
V
F
Maximum reverse recovery time (Note 2) 35
Storage temperature range - 55 to +150
- 55 to +150
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied V
R
=4.0 Volts
Note 1: Pulse test with PW=300μs, 1% duty cycle
0.95 1.3 1.7
10
350
Typical junction capacitance (Note 3)
I
R
