SiHP8N50D
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Vishay Siliconix
S12-0691-Rev. A, 02-Apr-12
2
Document Number: 91488
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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. C
oss(er)
is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
c. C
oss(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-0.8
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 500 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 250 μA - 0.58 - V/°C
Gate-Source Threshold Voltage (N) V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 3 - 5 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 1
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 10
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 4 A - 0.70 0.85
Forward Transconductance
a
g
fs
V
DS
= 20 V, I
D
= 4 A - 3 - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 100 V,
f = 1 MHz
- 527 -
pF
Output Capacitance C
oss
-52-
Reverse Transfer Capacitance C
rss
-8-
Effective Output Capacitance, Energy
Related
b
C
o(er)
V
DS
= 0 V to 400 V, V
GS
= 0 V
-46-
Effective Output Capacitance, Time
Related
c
C
o(tr)
-64-
Total Gate Charge Q
g
V
GS
= 10 V I
D
= 4 A, V
DS
= 400 V
-1530
nC Gate-Source Charge Q
gs
-4-
Gate-Drain Charge Q
gd
-7-
Turn-On Delay Time t
d(on)
V
DD
= 400 V, I
D
= 4 A
R
g
= 9.1 , V
GS
= 10 V
-1326
ns
Rise Time t
r
-1632
Turn-Off Delay Time t
d(off)
-1734
Fall Time t
f
-1122
Gate Input Resistance R
g
f = 1 MHz, open drain - 1.8 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--8
A
Pulsed Diode Forward Current I
SM
--32
Diode Forward Voltage V
SD
T
J
= 25 °C, I
S
= 4 A, V
GS
= 0 V - - 1.2 V
Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= I
S
= 4 A,
dI/dt = 100 A/μs, V
R
= 20 V
- 308 - ns
Reverse Recovery Charge Q
rr
-1.8-μC
Reverse Recovery Current I
RRM
-11-A
