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STD12NF06-1

P1-P3P4-P6P7-P9P10-P12P13-P14
November 2009 Doc ID 8431 Rev 7 1/14
14
STD12NF06
STD12NF06T4
N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK
STripFET™ II Power MOSFET
Features
■ Exceptional dv/dt capability
■ Low gate charge
Applications
■ Switching application
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Figure 1. Internal schematic diagram
Type
V
DSSS
R
DS(on)
I
D
STD12NF06 60V <0.1Ω 12A
STD12NF06T4 60V <0.1Ω 12A
1
3
DPAK
3
2
1
IPAK
Table 1. Device summary
Order codes Marking Package Packaging
STD12NF06T4T4 D12NF06 DPAK Tape and reel
STD12NF06T4-1 D12NF06 IPAK Tube
www.st.com
Contents STD12NF06, STD12NF06T4
2/14 Doc ID 8431 Rev 7
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STD12NF06, STD12NF06T4 Electrical ratings
Doc ID 8431 Rev 7 3/14
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 60 V
V
DGR
Drain-gate voltage (R
GS
= 20KΩ)60V
V
GS
Gate-source voltage ± 20 V
I
D
Drain current (continuous) at T
C
= 25°C 12 A
I
D
Drain current (continuous) at T
C
=100°C 8.5 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 48 A
P
TOT
Total dissipation at T
C
= 25°C 30 W
Derating factor 0.2 W/°C
dv/dt
(2)
2. I
SD
≤ 12 A, di/dt ≤ 200 A/µs, V
DS
≤ V
(BR)DSS
, T
J
≤ T
JMAX
Peak diode recovery voltage slope 15 V/ns
E
AS
(3)
3. Starting T
J
= 25
o
C, I
D
= 6 A, V
DD
= 30 V
Single pulse avalanche energy 140 mJ
T
stg
Storage temperature
-55 to 175 °C
T
J
Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case Max 5 °C/W
R
thJA
Thermal resistance junction-ambient Max 100 °C/W
T
l
Maximum lead temperature for soldering
purpose
275 °C
P1-P3P4-P6P7-P9P10-P12P13-P14

STD12NF06-1

Mfr. #:
Buy STD12NF06-1
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 60V 12A IPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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