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STD12NF06T4
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
Electrical ch
aracteristics
STD12NF06, STD12NF06T4
4/14
Doc ID 8431 Re
v 7
2 Electrical
characteristics
(T
CASE
=25°C unless otherwise specified)
T
able 4.
On /off sta
tes
Symbol
Pa
rameter
T
est conditions
Min.
T
yp.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 25mA, V
GS
= 0
60
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, T
C
= 125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±100
nA
V
GS(th)
Gate threshold v
oltage
V
DS
= V
GS
, I
D
= 250µA
2
3
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V
, I
D
= 6A
0.08
0.1
W
T
able 5.
Dynamic
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
g
fs
(1)
1.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
F
orward transconductance
V
DS
= 15V
,
I
D
= 6A
-
5
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Re
vers
e transf
er
capacitance
V
DS
= 25V
, f = 1 MHz,
V
GS
= 0
-
315
70
30
pF
pF
pF
Q
g
Q
gs
Q
gd
T
otal gate
charge
Gate-source charge
Gate-drain charge
V
DD
= 48V
, I
D
= 12A
V
GS
= 10V
-
10
3.0
3.5
12
nC
nC
nC
T
able 6.
Switching ti
mes
Symbol
Pa
rameter
T
est conditions
Min.
T
y
p.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
T
urn-on delay time
Rise time
T
ur
n-off dela
y time
F
all time
V
DD
= 30V
, I
D
= 6A,
R
G
= 4.7
Ω,
V
GS
= 10V
Figure 14 on page 8
-
7
18
17
6
-
ns
ns
ns
ns
STD12NF06, STD12NF06T4
Electric
al characteristics
Doc ID 8431 Rev 7
5/14
T
able 7.
Source drain diode
Symbol
P
arameter
T
est conditions
Min
T
yp.
Max
Unit
I
SD
Source-drain current
-
12
A
I
SDM
Source-drain current (pulsed)
-
48
A
V
SD
(1)
1.
Pulsed: pulse duration= 300 µs, duty cycle 1.5%
F
orward on voltage
I
SD
= 12A, V
GS
= 0
-
1.3
V
t
rr
Q
rr
I
RRM
Re
verse reco
very time
Rev
erse reco
very charge
Re
verse reco
very current
I
SD
= 12A,
di/dt = 100A/µs,
V
DD
= 30V
, T
J
= 150°C
Figure 16 on page
8
-
50
65
3.5
ns
nC
A
Electrical ch
aracteristics
STD12NF06, STD12NF06T4
6/14
Doc ID 8431 Re
v 7
2.1 Electrical
characteristics
(curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output c
haracteristics
Figure 5.
T
ransfer c
haracteristic
s
Figure 6.
T
ransconductanc
e
Figure 7.
Static drain-sour
ce on r
esistance
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
STD12NF06T4
Mfr. #:
Buy STD12NF06T4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 60V 12A DPAK
Lifecycle:
New from this manufacturer.
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Products related to this Datasheet
STD12NF06-1
STD12NF06T4