Electrical characteristics STD12NF06, STD12NF06T4
4/14 Doc ID 8431 Rev 7
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 25mA, V
GS
= 0 60 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, T
C
= 125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 2 3 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 6A 0.08 0.1 W
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward transconductance V
DS
= 15V
,
I
D
= 6A - 5 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
-
315
70
30
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 48V, I
D
= 12A
V
GS
= 10V
-
10
3.0
3.5
12
nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 30V, I
D
= 6A,
R
G
= 4.7Ω, V
GS
= 10V
Figure 14 on page 8
-
7
18
17
6
-
ns
ns
ns
ns
STD12NF06, STD12NF06T4 Electrical characteristics
Doc ID 8431 Rev 7 5/14
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current - 12 A
I
SDM
Source-drain current (pulsed) - 48 A
V
SD
(1)
1. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 12A, V
GS
= 0 - 1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12A,
di/dt = 100A/µs,
V
DD
= 30V, T
J
= 150°C
Figure 16 on page 8
-
50
65
3.5
ns
nC
A
Electrical characteristics STD12NF06, STD12NF06T4
6/14 Doc ID 8431 Rev 7
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance

STD12NF06T4

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 60V 12A DPAK
Lifecycle:
New from this manufacturer.
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