FFAF20U120DNTU

©2000 Fairchild Semiconductor International

FFAF20U120DN

Rev. F, September 2000

ULTRA FAST RECOVERY POWER RECTIFIER

Absolute Maximum Ratings (per diode) T

C

=25°°C unless otherwise noted

Thermal Characteristics

Electrical Characteristics (per diode) T

C

=25 °°C unless otherwise noted

* Pulse Test: Pulse Width=300µs, Duty Cycle=2%

Symbol Parameter Value Units

V

RRM

Peak Repetitive Reverse Voltage 1200 V

I

F(AV)

Average Rectified Forward Current @ T

C

= 100°C 20 A

I

FSM

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

120 A

T

J,

T

STG

Operating Junction and Storage Temperature - 65 to +150 °C

Symbol Parameter Value Units

R

θJC

Maximum Thermal Resistance, Junction to Case 0.84 °C/W

Symbol Parameter Min. Typ. Max. Units

V

FM *

Maximum Instantaneous Forward Voltage

I

F

= 20A

I

F

= 20A

T

C

= 25 °C

T

C

= 100 °C

-

-

-

-

3.5

3.2

V

I

RM

*

Maximum Instantaneous Reverse Current

@ rated V

R

T

C

= 25 °C

T

C

= 100 °C

-

-

-

-

20

1.2

µA

mA

t

rr

I

rr

Q

rr

Maximum Reverse Recovery Time

Maximum Reverse Recovery Current

Maximum Reverse Recovery Charge

(I

F

=20A, di/dt = 200A/µs)

-

-

-

-

-

-

120

10

500

ns

A

nC

W

AVL

Avalanche Energy 1.0 - - mJ

FFAF20U120DN

Features

• High voltage and high reliability

• High speed switching

• Low forward voltage

Applications

• General purpose

• Switching mode power supply

• Free-wheeling diode for motor application

• Power switching circuits

TO-3PF

1 2 3

1. Anode 2.Cathode 3. Anode

©2000 Fairchild Semiconductor International Rev. F, September 2000

FFAF20U120DN

Typical Characteristics

Figure 1. Typical Forward Voltage Drop

vs. Forward Current

Figure 3. Typical Junction Capacitance

Figure 5. Typical Reverse Recovery Current

vs. di/dt

Figure 2. Typical Reverse Current

vs. Reverse Voltage

Figure 4. Typical Reverse Recovery Time

vs. di/dt

Figure 6. Forward Current Derating Curve

0.1

1

10

100

0 1 2 3 4 5 6

T

C

= 25

o

C

T

C

= 100

o

C

Forward Voltage , V

F

[V]

Forward Current , I

F

[A]

0.1 1 10 100

50

100

150

200

250

300

350

400

Typical Capacitance

at 0V = 355 pF

Capacitance , Cj [pF]

Reverse Voltage , V

R

[V]

100 500

0

5

10

15

20

25

T

C

= 100

o

C

T

C

= 25

o

C

V

R

= 200V

I

F

= 20A

Reverse Recovery Current , I

rr

[A]

di/dt [A/µs]

0 200 400 600 800 1000 1200

0.001

0.01

0.1

1

10

100

1000

T

C

= 25

o

C

T

C

= 100

o

C

Reverse Current , I

R

[ µA]

Reverse Voltage , V

R

[V]

100 500

40

60

80

100

120

140

T

C

= 100

o

C

T

C

= 25

o

C

V

R

= 200V

I

F

= 20A

Reverse Recovery Time , t

rr

[ns]

di/dt [A/µs]

60 80 100 120 140 160

0

5

10

15

20

25

30

DC

Average Forward Current , I

F(AV)

[A]

Case Temperature , T

C

[

o

C]

©2000 Fairchild Semiconductor International

Rev. F, September 2000

FFAF20U120DN

Package Dimensions

Dimensions in Millimeters

TO-3PF

FFAF20U120DNTU

Mfr. #:

Buy FFAF20U120DNTU

Manufacturer:

ON Semiconductor / Fairchild

Description:

Rectifiers 20a/1200V Rectifier Ultrafast

Lifecycle:

New from this manufacturer.

Delivery:

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FFAF20U120DNTU