PTFA180701E
PTFA180701F
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 11 Rev. 03.1, 2009-02-20
Description
The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed
for GSM and GSM EDGE power amplifier applications in the 1805 MHz to
1880 MHz band. Features include input and output matching, and thermally-
enhanced packages with slotted or earless flanges. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical EDGE performance
- Average output power = 44 dBm
- Gain = 16.5 dB
- Efficiency = 40.5%
- EVM = 2.0%
• Typical CW performance
- Output power at P–1dB = 72 W
- Gain = 15.5 dB
- Efficiency = 59%
• Integrated ESD protection: Human Body
Model, Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
70 W (CW) output power
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 550 mA, P
OUT
= 44 dBm, ƒ = 1836.6 MHz
Characteristic Symbol Min Typ Max Unit
Error Vector Magnitude EVM RMS — 2.0 — %
Modulation Spectrum @ 400 kHz ACPR — –62 — dBc
@ 600 kHz ACPR — –76 — dBc
Gain G
ps
— 16.5 — dB
Drain Efficiency η
D
— 40.5 — %
Thermally-Enhanced High Power RF LDMOS FETs
70 W, 1805 – 1880 MHz
*See Infineon distributor for future availability.
EDGE EVM Performance
V
DD
= 28 V, I
DQ
= 550 mA, ƒ = 1836.6 MHz
0
1
2
3
4
5
30 32 34 36 38 40 42 44 46
Output Power, avg. (dBm)
EVM RMS (avg. %) .
0
10
20
30
40
50
Drain Efficiency (%)
Efficiency
PTFA180701E
Package H-36265-2
PTFA180701F
Package H-37265-2