SZTVS4201MR6T1G Datasheet SZTVS4201MR6T1G, TVS4201MR6T1G | P1-P3

June, 2015 − Rev. 1

1 Publication Order Number:

TVS4201MR6/D

TVS4201MR6

Transient Voltage

Suppressors

Low Clamping Voltage Surge Protection

Diode Array

The TVS4201MR6 transient voltage suppressor is designed to

protect high speed data lines from ESD, EFT, and lightning surges.

Features

• Protection for the Following IEC Standards:

IEC 61000−4−2 (ESD) ±30 kV (Contact)

IEC 61000−4−5 (Lightning) 25 A (8/20 ms)

• Low Clamping Voltage

• Low Leakage

• UL Flammability Rating of 94 V−0

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• High Speed Communication Line Protection

• USB 1.1 and 2.0 Power and Data Line Protection

• Digital Video Interface (DVI)

• Monitors and Flat Panel Displays

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Peak Power Dissipation

8/20 ms @ T

= 25°C (Note 1)

500 W

Operating Junction Temperature Range T

−40 to +125 °C

Storage Temperature Range T

stg

−55 to +150 °C

Lead Solder Temperature −

Maximum (10 Seconds)

260 °C

IEC 61000−4−2 Air (ESD)

IEC 61000−4−2 Contact (ESD)

ESD ±30

±30

IEC 61000−4−4 (5/50 ns) EFT 40 A

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Non−repetitive current pulse per Figure 1 (Pin 5 to Pin 2)

See Application Note AND8308/D for further description of

survivability specs.

MARKING DIAGRAM

Device Package Shipping

ORDERING INFORMATION

TSOP−6

CASE 318G

PIN CONFIGURATION AND SCHEMATIC

6 I/O

5 V

4 I/O

I/O 1

I/O 3

www.onsemi.com

42 = Specific Device Code

M = Date Code

G = Pb−Free Package

42 MG

TVS4201MR6T1G TSOP−6

(Pb−Free)

3000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

*Date Code orientation may vary

depending upon manufacturing location.

SZTVS4201MR6T1G TSOP−6

(Pb−Free)

3000 / Tape &

Reel

(Note: Microdot may be in either location)

TVS4201MR6

www.onsemi.com

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Symbol Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

RWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

Forward Current

Forward Voltage @ I

Peak Power Dissipation

C Capacitance @ V

= 0 and f = 1.0 MHz

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Uni−Directional TVS

RWM

ELECTRICAL CHARACTERISTICS (T

=25°C unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit

Reverse Working Voltage V

RWM

(Note 2) 5.0 V

Breakdown Voltage V

=1 mA, (Note 3) 6.0 V

Reverse Leakage Current I

RWM

= 5 V 1.0

Clamping Voltage

= 8/20 ms per Figure 1)

= 1 A, Any I/O to GND 8.5

= 5 A, Any I/O to GND 9.0

= 8 A, Any I/O to GND 10

= 25 A, Any I/O to GND 12

Junction Capacitance C

= 0 V, f=1 MHz between I/O Pins and GND 3.0 5.0 pF

Junction Capacitance C

= 0 V, f=1 MHz between I/O Pins 1.5 3.0 pF

2. TVS devices are normally selected according to the working peak reverse voltage (V

RWM

), which should be equal or greater than the DC

or continuous peak operating voltage level.

3. V

is measured at pulse test current I

Figure 1. IEC61000−4−5 8/20 ms Pulse Waveform

100

020406080

t, TIME (ms)

% OF PEAK PULSE CURRENT

PULSE WIDTH (t

) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

PEAK VALUE I

RSM

@ 8 ms

HALF VALUE I

RSM

/2 @ 20 ms

Figure 2. Clamping Voltage vs. Peak Pulse Current

= 8/20 ms per Figure 1)

PEAK PULSE CURRENT (A)

CLAMPING VOLTAGE (V)

10 15 20 25

I/O−GND

TVS4201MR6

www.onsemi.com

Figure 3. IEC61000−4−2 +8 kV Contact Clamping

Voltage

Figure 4. IEC61000−4−2 −8 kV Contact Clamping

Voltage

TIME (ns)

VOLTAGE (V)

−20

100

−20 0 20 40 60 80 100 120 140

TIME (ns)

VOLTAGE (V)

−100

−80

−60

−40

−20

−20 0 20 40 60 80 100 120 140

IEC 61000−4−2 Spec.

Level

Test Volt-

age (kV)

First Peak

Current

(A)

Current at

30 ns (A)

Current at

60 ns (A)

1 2 7.5 4 2

2 4 15 8 4

3 6 22.5 12 6

4 8 30 16 8

peak

90%

10%

IEC61000−4−2 Waveform

100%

I @ 30 ns

I @ 60 ns

= 0.7 ns to 1 ns

Figure 5. IEC61000−4−2 Spec

Figure 6. Diagram of ESD Test Setup

50 W

Cable

TVS

Oscilloscope

ESD Gun

The following is taken from Application Note

AND8308/D − Interpretation of Datasheet Parameters

for ESD Devices.

ESD Voltage Clamping

For sensitive circuit elements it is important to limit the

voltage that an IC will be exposed to during an ESD event

to as low a voltage as possible. The ESD clamping voltage

is the voltage drop across the ESD protection diode during

an ESD event per the IEC61000−4−2 waveform. Since the

IEC61000−4−2 was written as a pass/fail spec for larger

systems such as cell phones or laptop computers it is not

clearly defined in the spec how to specify a clamping voltage

at the device level. ON Semiconductor has developed a way

to examine the entire voltage waveform across the ESD

protection diode over the time domain of an ESD pulse in the

form of an oscilloscope screenshot, which can be found on

the datasheets for all ESD protection diodes. For more

information on how ON Semiconductor creates these

screenshots and how to interpret them please refer to

AND8307/D.

P1-P3 P4-P6

SZTVS4201MR6T1G

Mfr. #:

Buy SZTVS4201MR6T1G

Manufacturer:

ON Semiconductor

Description:

TVS Diodes / ESD Suppressors MI TSOP6 LO CAP DIOD

Lifecycle:

New from this manufacturer.

Delivery:

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SZTVS4201MR6T1G

SZTVS4201MR6T1G

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