IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR24N90P
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 12A, Note 1 10 16 S
R
Gi
Gate input resistance 1.1 Ω
C
iss
7200 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 490 pF
C
rss
60 pF
t
d(on)
46 ns
t
r
40 ns
t
d(off)
68 ns
t
f
38 ns
Q
g(on)
130 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 12A 50 nC
Q
gd
58 nC
R
thJC
0.54 °C/W
R
thCS
0.15 °C/W
Source-Drain Diode Characteristic Values
T
J
= 25°C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 24 A
I
SM
Repetitive, pulse width limited by T
JM
96 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
300 ns
Q
RM
1.1 μC
I
RM
11 A
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
I
F
= 12A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
ISOPLUS247 (IXFR) Outline
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 12A
R
G
= 1Ω (External)
