IRF7459PBF Datasheet IRF7459TRPBF, IRF7459PBF | P1-P3

IRF7459PbF

SMPS MOSFET

Notes  through  are on page 8

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

Drain-Source Voltage 20 V

V

GS

Gate-to-Source Voltage ± 12 V

I

D

@ T

A

= 25°C Continuous Drain Current, V

GS

@ 10V 12

I

D

@ T

A

= 70°C Continuous Drain Current, V

GS

@ 10V 10 A

I

DM

Pulsed Drain Current 100

P

D

@T

A

= 25°C Maximum Power Dissipation 2.5 W

P

D

@T

A

= 70°C Maximum Power Dissipation 1.6 W

Linear Derating Factor 0.02 W/°C

T

J

, T

STG

Junction and Storage Temperature Range -55 to + 150 °C

HEXFET

®

Power MOSFET

Benefits

V

DSS

R

DS(on)

max I

D

20V 9.0mΩ 12A

www.irf.com 1

4/17/06

l Ultra-Low Gate Impedance

l Very Low R

DS(on)

at 4.5V V

GS

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

8

1

2

3

4

5

6

7

D

DG

S

A

S

A

Symbol Parameter Typ. Max. Units

R

θJL

Junction-to-Drain Lead ––– 20

R

θJA

Junction-to-Ambient  ––– 50 °C/W

Thermal Resistance

l High Frequency DC-DC Isolated

Converters with Synchronous Rectification

for Telecom and Industrial use

Applications

l High Frequency Buck Converters for

Computer Processor Power

l Lead-Free

PD - 95459A

IRF7459PbF

2 www.irf.com

Symbol Parameter Min. Typ. Max. Units Conditions

g

fs

Forward Transconductance 32 ––– ––– S V

DS

= 16V, I

D

= 9.6A

Q

g

Total Gate Charge ––– 23 35 I

D

= 9.6A

Q

gs

Gate-to-Source Charge ––– 6.6 10 nC V

DS

= 10V

Q

gd

Gate-to-Drain ("Miller") Charge ––– 6.3 9.5 V

GS

= 4.5V 

Q

oss

Output Gate Charge ––– 17 26 V

GS

= 0V, V

DS

= 10V

t

d(on)

Turn-On Delay Time ––– 10 ––– V

DD

= 10V,

t

r

Rise Time ––– 4.5 ––– I

D

= 9.6A

t

d(off)

Turn-Off Delay Time ––– 20 ––– R

G

= 1.8Ω

t

f

Fall Time ––– 5.0 ––– V

GS

= 4.5V 

C

iss

Input Capacitance ––– 2480 ––– V

GS

= 0V

C

oss

Output Capacitance ––– 1030 ––– V

DS

= 10V

C

rss

Reverse Transfer Capacitance ––– 130 ––– pF ƒ = 1.0MHz

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol

(Body Diode)

––– –––

showing the

I

SM

Pulsed Source Current integral reverse

(Body Diode) 

––– –––

p-n junction diode.

––– 0.84 1.3 V T

J

= 25°C, I

S

= 9.6A, V

GS

= 0V 

––– 0.69 ––– T

J

= 125°C, I

S

= 9.6A, V

GS

= 0V

t

rr

Reverse Recovery Time ––– 70 105 ns T

J

= 25°C, I

F

= 9.6A, V

R

= 15V

Q

rr

Reverse Recovery Charge ––– 70 105 nC di/dt = 100A/µs



t

rr

Reverse Recovery Time ––– 70 105 ns T

J

= 125°C, I

F

= 9.6A, V

R

=15V

Q

rr

Reverse Recovery Charge ––– 75 113 nC di/dt = 100A/µs



Parameter Typ. Max. Units

E

AS

Single Pulse Avalanche Energy ––– 290 mJ

I

AR

Avalanche Current ––– 12 A

Avalanche Characteristics

Static @ T

J

= 25°C (unless otherwise specified)

I

GSS

I

DSS

Drain-to-Source Leakage Current

R

DS(on)

Static Drain-to-Source On-Resistance

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 20 ––– ––– V V

GS

= 0V, I

D

= 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient

––– 0.024 ––– V/°C Reference to 25°C, I

D

= 1mA

––– 6.7 9.0 V

GS

= 10V, I

D

= 12A 

––– 8.0 11 mΩ V

GS

= 4.5V, I

D

= 9.6A 

––– 11 22 V

GS

= 2.8V, I

D

= 6.0A 

V

GS(th)

Gate Threshold Voltage 0.6 ––– 2.0 V V

DS

= V

GS

, I

D

= 250µA

––– ––– 20

µA

V

DS

= 16V, V

GS

= 0V

––– ––– 100 V

DS

= 16V, V

GS

= 0V, T

J

= 125°C

Gate-to-Source Forward Leakage ––– ––– 200 V

GS

= 12V

Gate-to-Source Reverse Leakage ––– ––– -200

nA

V

GS

= -12V

S

D

G

Diode Characteristics

2.5

100

A

V

SD

Diode Forward Voltage

Dynamic @ T

J

= 25°C (unless otherwise specified)

ns

IRF7459PbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.0V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15.0V

10.0V

4.50V

3.00V

2.70V

2.50V

2.25V

BOTTOM 2.00V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.0V

20µs PULSE WIDTH

Tj = 150°C

VGS

TOP 15.0V

10.0V

4.50V

3.00V

2.70V

2.50V

2.25V

BOTTOM 2.00V

1

10

100

1000

2.0 2.5 3.0 3.5 4.0

V = 15V

20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 25 C

J

°

T = 150 C

J

°

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

12A

IRF7459PBF

IRF7459PBF

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