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VS-ST300S18M0PBF

P1-P3P4-P6P7-P8
VS-ST300SPbF Series
www.vishay.com
Vishay Semiconductors
Revision: 08-Jul-14
4
Document Number: 94406
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
Maximum Allowable Case Temperature (°C)
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
ST3 0 0 S Se r i e s
R (DC) = 0.10 K/ W
thJC
60
70
80
90
100
110
120
130
0100200300400500
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
ST3 0 0 S Se r i e s
R (DC) = 0.10 K/ W
thJC
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
0
.
0
8
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
6
K
/
W
1
.
2
K
/
W
R
=
0
.
0
3
K
/
W
-
D
e
l
t
a
R
t
h
S
A
0
.
1
2
K
/
W
0
40
80
120
160
200
240
280
320
360
400
440
480
04080120160200240280320
180°
120°
90°
60°
30°
RM S Li m it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST300S Series
T = 125°C
J
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R = 0 . 0 3 K/
W
-
De
l
t
a
R
th
S
A
0
.
0
8
K
/
W
0
.
1
2
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
6
K
/
W
1
.
2
K
/
W
0
50
100
150
200
250
300
350
400
450
500
550
600
650
0
100 200 300 400 500
DC
180°
120°
90°
60°
30°
RM S Lim it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST300S Series
T = 125°C
J
VS-ST300SPbF Series
www.vishay.com
Vishay Semiconductors
Revision: 08-Jul-14
5
Document Number: 94406
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
110100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Pe a k Ha lf Sine Wave On-state Current (A)
ST3 0 0 S Se r i e s
Init ia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Follow ing Surge.
RRM
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
0.01 0.1 1
Pulse Tra in Du ra t io n ( s)
Versus Pulse Train Duration. Control
Pea k Half Sine Wave On-state Curren t (A)
ST300S Serie s
Initia l T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
100
1000
10000
0123456789
T = 25 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 1 25 ° C
J
ST3 0 0 S Se r i e s
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a r e Wa v e Pu l se D u r a t i o n ( s)
thJC
ST3 0 0 S Se r i e s
Transient Thermal Imped ance Z (K/ W)
Steady State Value
R = 0 . 1 0 K/ W
(DC Operation)
thJC
VS-ST300SPbF Series
www.vishay.com
Vishay Semiconductors
Revision: 08-Jul-14
6
Document Number: 94406
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 12 5 ° C
Tj = - 4 0 ° C
(2)
(3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Fre q u e n c y Li m i t e d b y PG ( A V )
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
Device: ST300S Series
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(4)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95084
- Thyristor
1 - Vishay Semiconductors product
2
- Essential part number
3
- 0 = Converter grade
4
- S = Compression bonding stud
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
- P = Stud base 3/4" 16UNF-2A threads
7
- 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
M = Stud base metric threads (M24 x 1.5)
3 = Threaded top terminal 3/8" 24UNF-2A
9
10
- None = Standard production
- PbF = Lead (Pb)-free
8
- Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
Device code
51 32 4 6 7 8 9 10
STVS- 30 0 S 20 P 0 - PbF
P1-P3P4-P6P7-P8

VS-ST300S18M0PBF

Mfr. #:
Buy VS-ST300S18M0PBF
Manufacturer:
Vishay Semiconductors
Description:
SCRs Thyristors - TO-118 COMP RND-e3
Lifecycle:
New from this manufacturer.
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