Characteristics FERD30SM100DJF
2/8 DocID027306 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.562 x I
F(AV)
+ 0.0057 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified, anode terminals
short-circuited)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
Forward rms current 45 A
I
F(AV)
Average forward current, δ = 0.5 T
c
= 100 °C 30 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 180 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
(1)
Maximum operating junction temperature 175 °C
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol Parameter Value (max) Unit
R
th(j-c)
Junction to case 2.6 °C/W
Table 4. Static electrical characteristics (anode terminals short-circuited)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
R
RM
- - 150 µA
T
j
= 125 °C - 8 16
mA
T
j
= 125 °C V
R
= 70 V - - 9
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 5 A
- - 0.48
V
T
j
= 125 °C - 0.395 0.435
T
j
= 25 °C
I
F
= 10A
--0.595
T
j
= 125 °C - 0.51 0.555
T
j
= 25 °C
I
F
= 30 A
-0.97
T
j
= 125 °C - 0.665 0.735
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
