©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002
KSC1393
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage 30 V
V
CEO
Collector-Emitter Voltage 30 V
V
EBO
Emitter-Base Voltage 4 V
I
C
Collector Current 20 mA
P
C
Collector Power Dissipation 250 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=10µA, I
E
=0 30 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=5mA, I
B
=0 30 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=10µA, I
C
=0 4 V
I
CBO
Collector Cut-off Current V
CB
=20V, I
E
=0 0.1 µA
h
FE
DC Current Gain V
CE
=10V, I
C
=2mA 40 180
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
=3mA 400 700 MHz
C
RE
Reverse Transfer Capacitance V
CB
=10V, I
E
=0, f=1MHz 0.35 0.5 pF
G
PE
Power Gain V
CE
=10V, I
C
=3mA
f=200MHz
20 24 dB
I
AGC
AGC Current I
E
at G
R
= -30dB, f=200MHz -10 -12 mA
NF Noise Figure V
CE
=10V, I
C
= 3mA
f=200MHz
2.0 3.0 dB
Classification R O Y
h
FE
40 ~ 80 60 ~ 140 90 ~ 180
KSC1393
TV VHF Tuner RF Amplifier (Forward AGC)
• High Current Gain Bandwidth Product : f
T
=700MHz (TYP.)
• Low Noise Figure : NF=3.0dB (MAX.) at f=200MHz
• Low Reverse Transfer Capacitance : C
RE
=0.5pF (MAX.)
1. Base 2. Emitter 3. Collector
TO-92
1