KSC1393RTA

©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002

KSC1393

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25°C unless otherwise noted

Electrical Characteristics

T

a

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Ratings Units

V

CBO

Collector-Base Voltage 30 V

V

CEO

Collector-Emitter Voltage 30 V

V

EBO

Emitter-Base Voltage 4 V

I

C

Collector Current 20 mA

P

C

Collector Power Dissipation 250 mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

=10µA, I

E

=0 30 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

=5mA, I

B

=0 30 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

=10µA, I

C

=0 4 V

I

CBO

Collector Cut-off Current V

CB

=20V, I

E

=0 0.1 µA

h

FE

DC Current Gain V

CE

=10V, I

C

=2mA 40 180

f

T

Current Gain Bandwidth Product V

CE

=10V, I

C

=3mA 400 700 MHz

C

RE

Reverse Transfer Capacitance V

CB

=10V, I

E

=0, f=1MHz 0.35 0.5 pF

G

PE

Power Gain V

CE

=10V, I

C

=3mA

f=200MHz

20 24 dB

I

AGC

AGC Current I

E

at G

R

= -30dB, f=200MHz -10 -12 mA

NF Noise Figure V

CE

=10V, I

C

= 3mA

f=200MHz

2.0 3.0 dB

Classification R O Y

h

FE

40 ~ 80 60 ~ 140 90 ~ 180

KSC1393

TV VHF Tuner RF Amplifier (Forward AGC)

• High Current Gain Bandwidth Product : f

T

=700MHz (TYP.)

• Low Noise Figure : NF=3.0dB (MAX.) at f=200MHz

• Low Reverse Transfer Capacitance : C

RE

=0.5pF (MAX.)

1. Base 2. Emitter 3. Collector

TO-92

1

©2002 Fairchild Semiconductor Corporation

KSC1393

Rev. B1, September 2002

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Reverse Capacitance

Figure 5. Current Gain Bandwidth Product

012345678910

0

1

2

3

4

5

6

7

8

9

10

I

B

= 200

µ

A

I

B

= 180

µ

A

I

B

= 160

µ

A

I

B

= 140

µ

A

I

B

= 120

µ

A

I

B

= 100µA

I

B

= 80

µ

A

I

B

= 60

µ

A

I

B

= 40µA

I

B

= 20µA

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.1 1 10

10

100

V

CE

= 2V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

0.1 1 10

0.01

0.1

1

10

I

C

=10I

B

V

BE

(sat)

V

CE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

1 100

0.1

1

10

f=1MHz

I

E

=0

C

re

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

0.1 1 10 100

10

100

1000

10000

V

CE

= 10V

f

T

[MHz],

CURRENT GAIN-BANDWIDTH PRODUCT

I

C

[mA], COLLECTOR CURRENT

0.46

±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27

±0.20

]

1.27TYP

[1.27

±0.20

]

3.60

±0.20

14.47

±0.40

1.02

±0.10

(0.25)

4.58

±0.20

4.58

+0.25

–0.15

0.38

+0.10

–0.05

0.38

+0.10

–0.05

TO-92

Package Dimensions

KSC1393

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002

KSC1393RTA

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

RF Bipolar Transistors NPN 30V/20mA

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet