HT1X_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product short data sheet
COMPANY PUBLIC
Rev. 3.1 — 10 December 2014
210531 5 of 9
NXP Semiconductors
HT1x
HITAG 1 transponder IC
8. Limiting values
[1] Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
[1] Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
9. Abbreviations
Table 3. Limiting values - HT1ICS3002W/V6F
[1]
Symbol Parameter Conditions Min Max Unit
V
DD
supply voltage 0.5 6.5 V
V
ESD
electrostatic discharge voltage MIL-STD 883D, Method
3015.7, Human Body
2- kV
I
lu
latch-up current MIL-STD 883D, Method 3023 100 - mA
I
i(max)
maximum input current IN1-IN2 - 30 mA
T
j
junction temperature 55 +140 C
Table 4. Limiting values - HT1MOA4S30
[1]
Symbol Parameter Conditions Min Max Unit
T
stg
storage temperature 55 +125 C
T
amb
ambient temperature R
th(j-a)
30 K/W @ I
in
= 30 mA 25 +85 C
Table 5. Abbreviations
Acronym Description
AC AntiCollision
CRC Cyclic Redundancy Check
EEPROM Electrically Erasable Programmable Read-Only Memory
IC Integrated Circuit
RF Radio Frequency
RWD Read Write Device
