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MBRB2535CTL

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 6
1 Publication Order Number:
MBRB2535CTL/D
MBRB2535CTL
Preferred Device
SWITCHMODE™
Power Rectifier
D
2
PAK Surface Mount Power Package
The D
2
PAK Power Rectifier employs the Schottky Barrier principle
in a large metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for use in low voltage, high frequency
switching power supplies, free wheeling diodes, and polarity
protection diodes. These state−of−the−art devices have the following
features:
Features
• Center−Tap Configuration
• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94, V−0 @ 0.125 in
• Short Heatsink Tab Manufactured − Not Sheared
• Similar in Size to the Industry Standard TO−220 Package
• Pb−Free Packages are Available
Mechanical Characteristics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 1.7 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL1 Requirements
• ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
D
2
PAK
CASE 418B
STYLE 3
3
4
1
SCHOTTKY BARRIER
RECTIFIER
25 AMPERES, 35 VOLTS
1
3
4
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
AYWW
B2535LG
AKA
Device Package
Shipping
†
ORDERING INFORMATION
MBRB2535CTL D
2
PAK
50 Units/Rail
MBRB2535CTLT4 D
2
PAK
800/Tape & Ree
l
MBRB2535CTLG D
2
PAK
(Pb−Free)
50 Units/Rail
MBRB2535CTLT4G D
2
PAK
(Pb−Free)
800 Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
B2535L = Device Code
G = Pb−Free Package
AKA = Diode Polarity
MBRB2535CTL
http://onsemi.com
2
MAXIMUM RATINGS (Per Leg)
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
35 V
Average Rectified Forward Current, (Rated V
R
, T
C
= 110°C) I
F(AV)
12.5 A
Peak Repetitive Forward Current, (Rated V
R
, Square Wave, 20 kHz, T
C
= 90°C) I
FRM
25 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
I
RRM
1.0 A
Storage Temperature Range T
stg
−65 to +150 °C
Operating Junction Temperature T
J
−65 to +125 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic
Symbol Value Unit
Thermal Resistance, Junction−to−Case
Junction−to−Ambient (Note 1)
R
q
JC
R
q
JA
1.0
84
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 25 A, T
J
= 25°C)
(i
F
= 12.5 A, T
J
= 125°C)
(i
F
= 12.5 A, T
J
= 25°C)
v
F
0.55
0.41
0.47
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
I
R
500
10
mA
1. When mounted using minimum recommended pad size on FR−4 board.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MBRB2535CTL
http://onsemi.com
3
, REVERSE LEAKAGE CURRENT (mA)
50
20
10
5
2
1
0.5
0.2
0.1
0.9 100.80.70.60.50.40.30.20.10
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage, Per Leg
I
F
, INSTANTANEOUS FORWARD CURRENT (AMP)
1000
100
10
1
I
R
0.1
35302520150
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current, Per Leg
510
T
J
= 125°C
T
J
= 25°C
T
J
= 100°C
DC
T
J
= 125°C
SQUARE
WAVE
40
35
30
25
20
15
10
5
0
P
F(AV)
, AVERAGE FORWARD POWER DISSIPATION (WATTS)
403530252015105
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Typical Forward Power Dissipation
0
SINE WAVE
(RESISTIVE LOAD)
(RATED V
r
APPLIED)
R
q
JC
= 2°C/W
SQUARE
DC
32
28
24
20
16
12
8
4
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
0
1251151059585
T
C
, CASE TEMPERATURE (°C)
Figure 4. Current Derating, Case
T
J
= 125°C
T
J
= 25°C
P1-P3P4-P5

MBRB2535CTL

Mfr. #:
Buy MBRB2535CTL
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 12.5A 35V Low Vf
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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