KSC3953DSTU Datasheet KSC3953DSTU, KSC3953CS, KSC3953CSTU | P1-P3

KSC3953

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Electrical Characteristics

T

C

=25°C unless otherwise noted

h

FE

Classificntion

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 120 V

V

CEO

Collector-Emitter Voltage 120 V

V

EBO

Emitter-Base Voltage 3 V

I

C

Collector Current (DC) 200 mA

I

CP

Collector Current (Pulse) 400 mA

P

C

Collector Dissipation (T

a

=25°C) 1.3 W

P

C

Collector Dissipation (T

C

=25°C) 8 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= 10µA, I

B

= 0 120 V

BV

EBO

Collector-Emitter Breakdown Voltage I

C

= 1mA, R

BE

= ∞ 120 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= 100µA, I

C

= 0 3 V

I

CBO

Collector Cut-off Current V

CB

= 80V, I

E

= 0 0.1 µA

I

EBO

Emitter Cut-off Current V

EB

= 2V, I

C

= 0 1.0 µA

h

FE1

h

FE2

DC Current Gain V

CE

= 10V, I

C

= 10mA

V

CE

= 10V, I

C

= 100mA

40

20

120

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= 30mA, I

B

= 3mA 1.0 V

V

BE

(sat) Base-Emitter Saturation Voltage I

C

= 30mA, I

B

= 3mA 1.0 V

f

T

Current Gain Bandwidth Product V

CE

= 10V,I

C

= 50mA 400 MHz

C

ob

Output Capacitance V

CB

= 30V, f = 1MHz 2.1 pF

C

re

Reverse Transfer Capacitance V

CB

= 30V, f = 1MHz 1.7 pF

Classification C D

h

FE1

40 ~ 80 60 ~ 120

KSC3953

CRT Display Video Output

• High Current Gain Bandwidth Product : f

T

=400MHz(Typ.)

• High Collector-Emitter Voltage : V

CEO

=120V

• Low Reverse Transfer Capacitance : C

re

=1.7pF(Typ.)

1

TO-126

1. Emitter 2.Collector 3.Base

KSC3953

Rev. A, February 2000

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance Figure 6. Reverse Capacitance

048121620

0

20

40

60

80

100

I

B

= 0.9mA

I

B

= 0.8mA

I

B

= 0.7mA

I

B

= 0.6mA

I

B

= 0.5mA

I

B

= 0.4mA

I

B

= 0.3mA

I

B

= 0.2mA

I

B

= 0.1mA

I

B

= 0

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

1 10 100 1000

1

10

100

1000

V

CE

= 10V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

1 10 100 1000

0.01

0.1

1

10

I

C

= 10 I

B

V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0

20

40

60

80

100

120

V

CE

= 10V

I

C

[mA], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

0.1 1 10 100

0.1

1

10

100

f = 1MHz

I

E

= 0

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

0.1 1 10 100

0.1

1

10

100

f = 1MHz

I

E

= 0

C

re

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

KSC3953

Rev. A, February 2000

Typical Characteristics

(Continued)

Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area

Figure 9. Power Derating

110100

10

100

1000

V

CE

= 10V

f

T

[MHz], CURRENT GAIN BANDWIDTH PRODUCT

I

C

[mA], COLLECTOR CURRENT

1 10 100 1000

1

10

100

1000

T

C

= 25

o

C

I

C

MAX. (DC)

10ms

V

CEO

MAX.

1ms

I

C

MAX. (Pulse)

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

0

2

4

6

8

10

T

a

T

c

P

C

[W], POWER DISSIPATION

T[

o

C], TEMPERATURE

KSC3953DSTU

KSC3953DSTU

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