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RPR-220C1N

P1-P3
RPR-220
Sensors
1/3
Reflective photosensor (photoreflector)
RPR-220
The RPR-220 is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-
sensitivity, silicon planar phototransistor. A custom lamp was developed to enable the achievement of a smaller package
than with conventional reflectors.
!
!!
!Application
Compact disc players, Copiers, Game machines, Office
automation equipment
!
!!
!Features
1) A plastic lens is used for high sensitivity.
2) A built-in visible light filter minimizes the influence of
stray light.
3) Lightweight and compact.
!
!!
!External dimensions (Units : mm)
1. Unspecified tolerance shall be ±0.2.
Note :
2. Dimension in parenthesis are
show for reference.
2−φ2.2
4.96.5Min 20
1.4
6.4
2.8
2.5±1
(2.8)
(2.5)
4
3
1
2
4
31
2
Anode
Cathode
Emitter
Collector
4− 0.5±0.1
0.35
4−0.6
(0.6)
(3.2)(1)
(0.6)
!
!!
!Absolute maximum ratings (Ta=25°C)
Parameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Input
(LED)
Output
(Photo-
transistor)
Storage temperature
Symbol
I
F
V
R
P
D
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Limits
50
5
80
30
4.5
30
80
−25∼+85
−30∼+85
Unit
mA
V
mW
V
V
mA
mW
˚C
˚C
RPR-220
Sensors
2/3
!
!!
!Electrical and optical characteristics (Ta=25°C)
Input
characteristics
Output
characteristics
Transfer
characteristics
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Parameter Symbol
V
F
IR
ICEO
λP
IC
tr·tf
V
CE
(sat)
Min.
−
−
−
−
0.08
−
−
Typ.
1.34
−
−
800
0.3
0.1
10 −
Max.
1.6
10
0.5
−
0.8
0.3
Unit
VI
F=
50mA
V
R=
5V
V
CE=
10V
−
V
CE=
2V,
IF=
10mA
V
CC=
10V,
IF=
20mA,
RL=
100Ω
I
F=
20mA,
IC=
0.1mA
µA
µA
nm
µA
V
Conditions
µs
!
!!
!
Electrical and optical characteristic curves
AMBIENT TEMPERATURE : Ta (°C)
10080604020
P
C
P
D
0
0
20
40
60
80
100
Fig.1 Power dissipation / collector power
dissipation vs. ambient temperature
POWER DISSIPATION /
COLLECTOR POWER DISSIPTION : P
D
/ P
C
(mW)
FORWARD CURRENT : I
F
(
mA)
FORWARD VOLTAGE : V
F
(V)
0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1
10
100
1A
Ta=25°C
Fig.2 Forward current
vs. forward voltage
FORWARD VOLTAGE : V
F
(V)
AMBIENT TEMPERATURE : Ta (°C)
Fig.3 Forward voltage vs. ambient
temperature
0 20406080100
0
0.4
0.8
1.2
1.6
2.0
10mA
1mA
0
0.5
1.0
1.5
2.0
2.5
0 1020304050
FORWARD CURRENT : I
F
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
V
CE
=2V
d=6mm
Fig.4 Collector current
vs. forward current
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR − EMITTER : V
CE
(
V)
0 5 10 15 20 25
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Fig.5 Output characteristics
30mA
20mA
15mA
10mA
5mA
I
F
=40mA
Standard paper (90% reflection)
d=6mm
DARK CURRENT : I
CEO
(µ
A)
AMBIENT TEMPERATURE : Ta (°C)
−80 −60 −40 −20 0 20 40 60 80 100 120 140−100
0.001
0.01
0.1
1
Fig.6 Dark current vs. ambient
temperature
20V
10V
V
CE
=30V
RPR-220
Sensors
3/3
1
10
100
02468101214
DISTANCE : d (
mm)
RELATIVE COLLECTOR WRRENT : I
C
(%)
Fig.7 Relative output vs. distance
RELATIVE COLLECTOR CURRENT : IC (%)
AMBIENT TEMPERATURE : Ta (°C)
−40−60 −200 20406080100
0
20
40
60
80
100
120
160
140
Fig.8 Relative output vs. ambient
temperature
Fig.9 Forward current vs.
ambient temperature
FORWARD CURRENT : I
F
(
mA)
0 20 40 60 80 100
20
80
100
60
40
0
AMBIENT TEMPERATURE : Ta (°C)
!
!!
!
Circuit for testing transfer characteristics
V
CC
I
C
I
F
d=6mm
Reflection plate
V
CC
=2V
I
F
=10mA
P1-P3

RPR-220C1N

Mfr. #:
Buy RPR-220C1N
Manufacturer:
ROHM Semiconductor
Description:
Optical Switches, Reflective, Phototransistor Output REFLECTIVE PHTOSENSR
Lifecycle:
New from this manufacturer.
Delivery:
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