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BYG23M-E3/TR3

P1-P3P4-P5
BYG23M
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
1
Document Number: 88962
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
• High reverse voltage
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.5 A
V
RRM
1000 V
I
FSM
30 A
I
R
5.0 μA
t
rr
75 ns
V
F
1.7 V
E
R
20 mJ
T
J
max. 150 °C
Package DO-214AC (SMA)
Diode variations Single die
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG23M UNIT
Device marking code BYG23M
Maximum repetitive peak reverse voltage V
RRM
1000 V
Average forward current at T
A
= 65 °C I
F(AV)
1.5 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
(BR)R
= 1 A, T
J
= 25 °C
E
R
20 mJ
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
BYG23M
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
2
Document Number: 88962
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Notes
(1)
Mounted on epoxy-glass hard tissue, 17 mm
2
35 μm Cu
(2)
Mounted on epoxy-glass hard tissue, 50 mm
2
35 μm Cu
(3)
Mounted on Al-oxide-ceramic (Al
2
O
3
), 50 mm
2
35 μm Cu
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYG23M UNIT
Minimum breakdown voltage I
R
= 100 μA V
BR
1000 V
Maximum instantaneous voltage I
F
= 1.0 A
T
J
= 25 °C
V
F
(1)
1.7
V
T
J
= 150 °C 1.35
Maximum reverse current V
R
= V
RRM
T
J
= 25 °C
I
R
5
µA
T
J
= 125 °C 50
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
75 ns
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG23M UNIT
Typical thermal resistance, junction to case R
JC
25 °C/W
Typical thermal resistance, junction to ambient
R
JA
(1)
150
°C/WR
JA
(2)
125
R
JA
(3)
100
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QANTITY DELIVERY MODE
BYG23M-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYG23M-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYG23MHE3/TR
(1)
0.064 TR 1800 7" diameter plastic tape and reel
BYG23MHE3/TR3
(1)
0.064 TR3 7500 13" diameter plastic tape and reel
BYG23M
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
3
Document Number: 88962
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Max. Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 3 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1
10
100
Forward Voltage (V)
Forward Current (A)
T
J
= 150 °C
T
J
= 25 °C
0
0.2
0.4
0.6
0.
8
1.0
1.2
1.4
1.6
V
R
= V
RRM
Half Sine-Wave
R
θJA
= 25 K/W
R
θJA
= 150 K/W
1007550250 125 150
Ambient Temperature (°C)
Average Forward Cu
rrent (A)
R
θJA
= 125 K/W
0
20
40
60
80
100
120
140
160
25 50 75 100 125 150
100 %
Reverse Power Dissipation (mW)
Junction Temperature (°C)
V
R
= V
RRM
R
θJA
= 125 K/W
R
θJA
= 175 K/W
80 %
1
10
100
1000
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperat
u
re (°C)
V
R
= V
RRM
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0.1 1 10 100
f = 1 MHz
T
J
= 25 °C
Reverse Voltage (V)
Diode Capacitance (pF)
P1-P3P4-P5

BYG23M-E3/TR3

Mfr. #:
Buy BYG23M-E3/TR3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1.5 Amp 1000 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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