OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BUK9620-55A,118

P1-P3P4-P6P7-P9P10-P12P13-P14
BUK9620-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 June 2010 6 of 13
NXP Semiconductors
BUK9620-55A
N-channel TrenchMOS logic level FET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
03nc91
0
20
40
60
80
100
120
140
160
180
200
0246810
V
DS
(V)
I
D
(A)
10
9
8
V
GS
(V) =
7
3
4
5
6
2.2
03nc90
10
15
20
25
30
246810
V
GS
(V)
R
DSon
(mΩ)
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
maxtypmin
03nc88
0
10
20
30
40
50
0 20406080
I
D
(A)
g
fs
(S)
BUK9620-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 June 2010 7 of 13
NXP Semiconductors
BUK9620-55A
N-channel TrenchMOS logic level FET
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 10. Gate-source voltage as a function of gate
charge; typical values
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
03nc89
0
20
40
60
80
100
120
0246
V
GS
(V)
I
D
(A)
T
j
= 175 °CT
j
= 25 °C
03nc87
0
1
2
3
4
5
0102030
Q
G
(nC)
V
GS
(V)
V
DD
= 44V
V
DD
= 14V
03aa33
0
0.5
1
1.5
2
2.5
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
03nc92
10
20
30
40
50
0 50 100 150
I
D
(A)
R
DSon
(mΩ)
V
GS
(V) = 543.83.63.43.23
BUK9620-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 June 2010 8 of 13
NXP Semiconductors
BUK9620-55A
N-channel TrenchMOS logic level FET
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
T
j
(°C)
−60 180120060
03aa28
1.2
0.6
1.8
2.4
a
0
03nc93
0
500
1000
1500
2000
2500
3000
3500
4000
4500
10
−2
10
−1
1 10 10
2
V
DS
(V)
C (pF)
C
iss
C
oss
C
rss
03nc86
0
20
40
60
80
100
120
0.0 0.5 1.0 1.5
V
SD
(V)
I
S
(A)
T
j
= 175 °C
T
j
= 25 °C
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK9620-55A,118

Mfr. #:
Buy BUK9620-55A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet