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FMX-G12S
P1-P3
P4-P4
SANKEN ELECTR
IC CO., LTD.
FMX-G12S
040128
1
/
4
61426-
01
1.
Scope
The present specificatio
ns shall apply to a
n FMX
-G12S
2.
Outline
T
ype
Silicon Diode
Structure
Resin Molded
Flammability : UL94V
-0 (Equivalent)
Applications
High Frequency
Rectification
3.
Absolute maximum ratin
gs
N
o.
Item
Symbol
Unit
Rating
Conditions
1
T
ransient P
eak Reverse V
oltage
V
RSM
V
200
2
Peak Reverse
V
oltage
V
RM
V
200
3
A
ve
rage Forward Current
I
F (A
V)
A
5.0
T
c=123
°C
, Sinewave
4
Peak Surge Forw
ard Current
I
FSM
A
65
10msec.
Half sinewave, one shot
5
I
2
t Limiting
V
alu
e
I
2
t
A
2
s
21
6
Junction T
em
p
erature
T
j
°C
-
40
~
+150
7
Storage T
emperature
T
stg
°C
-
40
~
+150
8
Screwing T
orque
N
・
m
0.59
9
Dielectric Strength
kV
A.C.1.0
Lead and case (1
minute)
4.
Electrical characteristic
s (T
a=25
°C
, unless other
wise specified)
No
Item
Symbol
Unit
V
alue
Conditions
1
Forward V
oltage Drop
V
F
V
0.98 max.
I
F
=5.0A
2
Reverse Leakage Current
I
R
uA
100 max.
V
R
=V
RM
3
Reverse
Leakage
Current
Under
High T
em
p
erature
H
・
I
R
mA
20 max.
V
R
=V
RM
, T
j
=150
°C
4
Reverse Recovery T
ime
trr1
ns
30 max.
I
F
=I
R
=500mA
9
0
% R
e
c
ove
ry
po
i
n
t
,
T
j
=
25
°C
t
rr2
ns
25 max.
I
F
=500mA,I
R
=1000mA,
7
5
% R
e
c
ove
ry
po
i
n
t
,
T
j
=
25
°C
5
Thermal Resistance
R
th (j-
c)
°C
/W
4.0 max.
Between Junction and case
SANKEN ELECTR
IC CO., LTD.
FMX-G12S
040128
2
/
4
61426-
01
5.
Characteristics
I
F(A
V)
- P
F
P
F
(W)
Forward Power Dissipation (W)
I
F(A
V)
(A)
A
ve
rage Forward Current (A)
V
R
- P
R
P
R
(W)
Reverse Power Dissipation (W)
V
R
(V)
Reverse V
oltage (V)
SANKEN ELECTR
IC CO., LTD.
FMX-G12S
040128
3
/
4
61426-
01
6.
Derating
T
c
- I
F(A
V)
V
R
=200(V)
I
F(A
V)
(A)
A
verage Forward Current (A)
T
c (
°C
)
Case
T
em
p
erature (
°C
)
P1-P3
P4-P4
FMX-G12S
Mfr. #:
Buy FMX-G12S
Manufacturer:
Description:
DIODE GEN PURP 200V 5A TO220F-2L
Lifecycle:
New from this manufacturer.
Delivery:
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TNT
EMS
Payment:
T/T
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FMX-G12S