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STPSC20H12CWL

P1-P3P4-P6P7-P9P10-P10
February 2017
DocID030344 Rev 1
1/10
This is information on a product in full production.
www.st.com
STPSC20H12C
1200 V power Schottky silicon carbide diode
Datasheet - production data
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Robust high voltage periphery
Operating T
j
from -40 °C to 175 °C
ECOPACK
®
2 compliant
Description
The SiC diode, available in TO-247 LL, is an
ultrahigh performance power Schottky rectifier. It
is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of
a low V
F
Schottky diode structure with a 1200 V
rating. Due to the Schottky construction, no
recovery is shown at turn-off and ringing patterns
are negligible. The minimal capacitive turn-off
behavior is independent of temperature.
Especially suited for use in PFC and secondary
side applications, this ST SiC diode will boost the
performance in hard switching conditions. This
rectifier will enhance the performance of the
targeted application. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1: Device summary
Symbol
I
F(AV)
2 x 10 A
V
RRM
1200 V
T
j
(max.)
175 °C
V
F
(typ.)
1.35 V
K
A1
A2
TO-247 LL
K
A2
A1
Characteristics
STPSC20H12C
2/10
DocID030344 Rev 1
1 Characteristics
Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage (T
j
= -40 °C to +175 °C)
1200
V
I
F(RMS)
Forward rms current
25
A
I
F(AV)
Average forward
current
T
C
= 150 °C, DC current
Per diode/per
device
10/20
A
T
C
= 135 °C, DC current
14/28
T
C
= 25 °C, DC current
25/50
I
FRM
Repetitive peak
forward current
T
C
= 150 °C, T
j
= 175 °C, δ = 0.1
42
A
I
FSM
Surge non repetitive
forward current
t
p
= 10 ms sinusoidal
T
C
= 25 °C
71
A
T
C
= 150 °C
60
t
p
= 10 µs square
T
C
= 25 °C
420
T
stg
Storage temperature range
-65 to +175
°C
T
j
Operating junction temperature range
-40 to +175
°C
Table 3: Thermal resistance parameters
Symbol
Parameter
Typ. value
Max. value
Unit
R
th(j-c)
Junction to case
Per diode
0.70
0.95
°C/W
Per device
0.35
0.48
Table 4: Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-
5
60
µA
T
j
= 150 °C
-
30
400
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 10 A
-
1.35
1.50
V
T
j
= 150 °C
-
1.75
2.25
Notes:
(1)
Pulse test: t
p
= 10 ms, δ < 2%
(2)
Pulse test: t
p
= 500 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 1.03 x I
F(AV)
+ 0.122 x I
F
2
(RMS)
STPSC20H12C
Characteristics
DocID030344 Rev 1
3/10
Table 5: Dynamic electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Q
Cj
(1)
Total capacitive charge
V
R
= 800 V
-
57
-
nC
C
j
Total capacitance
V
R
= 0 V, T
c
= 25 °C, F = 1 MHz
-
725
-
pF
V
R
= 800 V, T
c
= 25 °C, F = 1 MHz
-
47
-
Notes:
(1)
Most accurate value for the capacitive charge:
P1-P3P4-P6P7-P9P10-P10

STPSC20H12CWL

Mfr. #:
Buy STPSC20H12CWL
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 1200 V power Schottky silicon carbide diode
Lifecycle:
New from this manufacturer.
Delivery:
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