NTB6410AN, NTP6410AN, NVB6410AN
www.onsemi.com
4
0
1000
2000
3000
4000
5000
6000
7000
8000
0 102030405060708090100
T
J
= 25°C
V
GS
= 0 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 20 40 60 80 100 120
Q
T
Q
gd
Q
gs
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
V
DS
= 80 V
I
D
= 76 A
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1
10
100
1000
1 10 100
R
G
, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
t
d(off)
t
f
t
r
t
d(on)
V
DS
= 80 V
I
D
= 76 A
V
GS
= 10 V
0
10
20
30
40
50
60
70
80
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1
I
S
, SOURCE CURRENT (A)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
T
J
= 25°C
V
GS
= 0 V
0.1
1
10
100
1000
1 10 100 1000
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
10
m
s
100
m
s
1
ms
10
ms
dc
D
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Opeating Area
0
100
200
300
400
500
25 50 75 100 125 150 17
AVALANCHE ENERGY (mJ)
T
J
, STARTING JUNCTION TEMPERATURE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
I
D
= 57.7 A
V
, DRAIN−TO−SOURCE VOLTAGE (V
100
80
60
40
20
0
V
GS
V
DS
