ZTX753

PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2  JULY 94
FEATURES
* 100 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
*P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX752 ZTX753 UNIT
Collector-Base Voltage V
CBO
-100 -120 V
Collector-Emitter Voltage V
CEO
-80 -100 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-6 A
Continuous Collector Current I
C
-2 A
Power Dissipation at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL
ZTX752 ZTX753
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown
Voltage
V
(BR)CBO
-100 -120 V
I
C
=-100µA
Collector-Emitter
Breakdown
Voltage
V
(BR)CEO
-80 -100 V I
C
=-10mA*
Emitter-Base
Breakdown
Voltage
V
(BR)EBO
-5 -5 V
I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-0.1
-10
-0.1
-10
µA
µA
µA
µA
V
CB
=-80V
V
CB
=-100V
V
CB
=-80V,T =100°C
V
CB
=-100V,T =100°C
Emitter Cut-Off
Current
I
EBO
-0.1 -0.1
µA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.17
-0.30
-0.3
-0.5
-0.17
-0.30
-0.3
-0.5
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9 -1.25 -0.9 -1.25 V I
C
=-1A, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8 -1 -0.8 -1 V IC=-1A, V
CE
=-2V*
ZTX752
ZTX753
3-260
C
B
E
E-Line
TO92 Compatible
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL
ZTX752 ZTX753
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
f
T
100 140 100 140 MHz I
C
=-100mA, V
CE
=-5V
f=100MHz
Switching Times t
on
40 40 ns I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
600 600 ns
Output
Capacitance
C
obo
30 30 pF V
CB
=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
°C/W
°C/W
°C/W
 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX752
ZTX753
-40 0.0001
Derating curve
T -Temperature (°C)
M
ax
Po
we
r
D
issi ati
o
n
-
(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 10010.10.01-20 0 20
40 60 80 100 120 200180160140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
3-261
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2  JULY 94
FEATURES
* 100 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
*P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX752 ZTX753 UNIT
Collector-Base Voltage V
CBO
-100 -120 V
Collector-Emitter Voltage V
CEO
-80 -100 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-6 A
Continuous Collector Current I
C
-2 A
Power Dissipation at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL
ZTX752 ZTX753
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown
Voltage
V
(BR)CBO
-100 -120 V
I
C
=-100µA
Collector-Emitter
Breakdown
Voltage
V
(BR)CEO
-80 -100 V I
C
=-10mA*
Emitter-Base
Breakdown
Voltage
V
(BR)EBO
-5 -5 V
I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-0.1
-10
-0.1
-10
µA
µA
µA
µA
V
CB
=-80V
V
CB
=-100V
V
CB
=-80V,T =100°C
V
CB
=-100V,T =100°C
Emitter Cut-Off
Current
I
EBO
-0.1 -0.1
µA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.17
-0.30
-0.3
-0.5
-0.17
-0.30
-0.3
-0.5
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9 -1.25 -0.9 -1.25 V I
C
=-1A, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8 -1 -0.8 -1 V IC=-1A, V
CE
=-2V*
ZTX752
ZTX753
3-260
C
B
E
E-Line
TO92 Compatible
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL
ZTX752 ZTX753
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
f
T
100 140 100 140 MHz I
C
=-100mA, V
CE
=-5V
f=100MHz
Switching Times t
on
40 40 ns I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
600 600 ns
Output
Capacitance
C
obo
30 30 pF V
CB
=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
°C/W
°C/W
°C/W
 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX752
ZTX753
-40 0.0001
Derating curve
T -Temperature (°C)
M
ax
Po
we
r
D
issi ati
o
n
-
(
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 10010.10.01-20 0 20
40 60 80 100 120 200180160140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
3-261
ZTX752
ZTX753
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
C
E
(sat)
-
(V
olts)
0.01
0.1
101
10
0
0.1
0.2
0.4
0.5
0.3
0.6
0.0010.0001
I
C
/I
B
=10
IC - Collector Current (Amps)
h
FE
v I
C
h
F
E
- Gain
0.01
0.1 1
V
CE
=2V
125
175
225
75
0
IC - Collector Current (Amps)
V
BE(sat)
v I
C
V
B
E
(sat)
-
(V
olts)
0.6
0.8
1.0
1.2
1.4
0.01
100.1 1
0.0001
0.001
I
C
/I
B
=10
IC - Collector Current (Amps)
V
BE(on)
v I
C
V
BE
- (V
olts)
0.6
0.8
1.0
1.2
0.4
0.01
100.1 1
0.0001
0.001
V
CE
=2V
Switching Speeds
IC - Collector Current (Amps)
Switching time
0.1
1
I
B1
=I
B2
=I
C
/10
ts
tf
td
tr
ts
ns
0
td
tr
tf
ns
100
120
40
20
60
80
140
0
1000
1200
400
200
600
800
1400
I
C
- Co
l
le
c
to
r
Cur
r
e
n
t (
Am
ps)
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
1 10 100
0.01
0.1
1
10
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
100µs
ZT
X
7
5
2
ZT
X
7
5
3
0.1
3-262

ZTX753

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP Super E-Line
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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