OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BUK9K52-60E,115

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
BUK9K52-60E
Dual N-channel 60 V, 55 mΩ logic level MOSFET
BUK9K52-60E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 24 February 2015 6 / 13
Symbol Parameter Conditions Min Typ Max Unit
Dynamic characteristics FET1 and FET2
Q
G(tot)
total gate charge - 5.6 - nC
Q
GS
gate-source charge - 1.1 - nC
Q
GD
gate-drain charge
I
D
= 5 A; V
DS
= 48 V; V
GS
= 5 V;
T
j
= 25 °C; Fig. 14; Fig. 15
- 2.3 - nC
C
iss
input capacitance - 544 725 pF
C
oss
output capacitance - 74 89 pF
C
rss
reverse transfer
capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; Fig. 16
- 40 55 pF
t
d(on)
turn-on delay time - 6.2 - ns
t
r
rise time - 10.1 - ns
t
d(off)
turn-off delay time - 10.7 - ns
t
f
fall time
V
DS
= 48 V; R
L
= 10 Ω; V
GS
= 5 V;
R
G(ext)
= 5 Ω; T
j
= 25 °C; I
D
= 5 A
- 9 - ns
Source-drain diode FET1 and FET2
V
SD
source-drain voltage I
S
= 5 A; V
GS
= 0 V; T
j
= 25 °C; Fig. 17 - 0.78 1.2 V
t
rr
reverse recovery time - 17.7 - ns
Q
r
recovered charge
I
S
= 5 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 30 V; T
j
= 25 °C
- 11.6 - nC
003aaj548
0
10
20
30
0 4 8 12 16 20
I
D
(A)
g
fs
(S)
Fig. 6. Forward transconductance as a function of
drain current; typical values
003aaj549
0
20
40
60
80
0 2 4 6 8
V
GS
(V)
I
D
(A)
T
j
= 25
°
CT
j
= 175
°
C
Fig. 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
NXP Semiconductors
BUK9K52-60E
Dual N-channel 60 V, 55 mΩ logic level MOSFET
BUK9K52-60E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 24 February 2015 7 / 13
003aaj550
0
60
120
180
0 4 8 12 16
V
GS
(V)
R
DSon
(m
Ω
)
Fig. 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aaj551
0
4
8
12
16
20
0 2 4 6
V
DS
(V)
I
D
(A)
V
GS
(V) =
2.6
2.8
3.5
4.5
10
2.4
3
Fig. 9. Output characteristics: drain current as a
function of drain-source voltage; typical values
003aah025
0
0.5
1
1.5
2
2.5
3
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
003aah026
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0 1 2 3
V
GS
(V)
I
D
(A)
maxtypmin
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
NXP Semiconductors
BUK9K52-60E
Dual N-channel 60 V, 55 mΩ logic level MOSFET
BUK9K52-60E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 24 February 2015 8 / 13
003aaj556
30
60
90
120
150
2 6 10 14 18 22
I
D
(A)
R
DSon
(m
Ω
)
4.5
V
GS
(V) =
10
2.8
3
3.5
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
003aaj816
0
0.8
1.6
2.4
-60 0 60 120 180
T
j
(
°C)
a
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
Fig. 14. Gate charge waveform definitions
003aaj553
0
2
4
6
8
10
0 5 10 15
Q
G
(nC)
V
GS
(V)
V
DS
=
14 V
48 V
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK9K52-60E,115

Mfr. #:
Buy BUK9K52-60E,115
Manufacturer:
Nexperia
Description:
MOSFET Dual N-channel 60 V 55 mo FET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet