HMPP-3865-BLK

HMPP-386x Series
MiniPak Surface Mount RF PIN Diodes
Data Sheet
Description/Applications
These ultra-miniature products represent the blending of
Avago Technologies proven semiconductor and the latest
in leadless packaging technology.
The HMPP-386x series of general purpose PIN diodes are
designed for two classes of applications. The rst is attenu-
ators where current consumption is the most important
design consideration. The second application for this
series of diodes is in switches where low capacitance with
no reverse bias is the driving issue for the designer.
The low dielectric relaxation frequency of the HMPP-386x
insures that low capacitance can be reached at zero volts
reverse bias at frequencies above 1 GHz, making this PIN
diode ideal for hand held applications.
Low junction capacitance of the PIN diode chip, combined
with ultra low package parasitics, mean that these products
may be used at frequencies which are higher than the upper
limit for conventional PIN diodes.
Note that Avagos manufacturing techniques assure that
dice packaged in pairs are taken from adjacent sites on
the wafer, assuring the highest degree of match.
Minipak 1412 is a ceramic based package, while Minipak
QFN is a leadframe based package.
Package Lead Code Identication (Top View)
Features
Surface mount MiniPak package
Better thermal conductivity for higher power dissipa-
tion
Single and dual versions
Matched diodes for consistent performance
Low capacitance at zero volts
Low resistance
Low FIT (Failure in Time) rate*
Six-sigma quality level
* For more information, see the Surface Mount Schottky Reliability
Data Sheet.
Pin Connections and Package Marking
Notes:
1. Package marking provides orientation and identication.
2. See “Electrical Specications” for appropriate package marking.
Single
3
2
4
1
#0
Anti-parallel
3
2
4
1
#2
Parallel
3
2
4
1
#5
(Minipak 1412) (Minipak 1412) (Minipak 1412)
3
2
Product code Date code
4
AA
1
2
HMPP-386x Series Absolute Maximum Ratings
[1]
, T
C
= 25°C
MiniPak 1412 /
Symbol Parameter Units MiniPak QFN
I
f
Forward Current (1 µs pulse) Amp 1
P
IV
Peak Inverse Voltage V 100
T
j
Junction Temperature °C 150
T
stg
Storage Temperature °C -65 to +150
θ
jc
Thermal Resistance
[2]
°C/W 150
Notes:
1. Operation in excess of any one of these
conditions may result in permanent dam-
age to the device.
2. T
C
= +25°C, where T
C
is dened to be the
temperature at the package pins where
contact is made to the circuit board.
MiniPak1412
Electrical Specications, T
C
= +25°C, each diode
Part Number Package Minimum Breakdown Typical Series
HMPP- Marking Code Lead Code Conguration Voltage (V) Resistance
(Ω)
3860 H 0 Single 50 3.0/1.5*
3862 F 2 Anti-parallel
3865 E 5 Parallel
Test Conditions V
R
= V
BR
I
F
= 10 mA
Measure f = 100 MHz
I
R
≤ 10 µA *I
F
= 100 mA
ESD WARNING:
Handling Precautions Should Be Taken
To Avoid Static Discharge.
MiniPak1412
Typical Parameters, T
C
= +25°C
Part Number Total Resistance Carrier Lifetime Reverse Recovery Time Total Capacitance
HMPP- R
T
(Ω) τ (ns) T
rr
(ns) C
T
(pF)
3860 22 500 80 0.20
3862
3865
Test Conditions I
F
= 1 mA I
F
= 50 mA V
R
= 10 V V
R
= 50V
f = 100 MHz T
R
= 250 mA I
F
= 20 mA f = 1 MHz
90% Recovery
3
MiniPak 1412 HMPP-386x Series Typical Performance
T
C
= +25 °C (unless otherwise noted), each diode
Figure 1. RF Capacitance vs. Reverse Bias.
0.15
0.30
0.25
0.20
0.35
0 2 64 10 128 1614 18 20
TOTAL CAPACITANCE (pF)
REVERSE VOLTAGE (V)
1 GHz
100 MHz
1 MHz
120
115
110
105
100
95
90
85
1 10 30
I
F
– FORWARD BIAS CURRENT (mA)
Figure 3. 2nd Harmonic Input Intercept Point
vs. Forward Bias Current for Switch Diodes.
INPUT INTERCEPT POINT (dBm)
Diode Mounted as a
Series Switch in a
50 Microstrip and
Tested at 123 MHz
FORWARD CURRENT (mA)
Figure 4. Reverse Recovery Time vs. Forward
Current for Various Reverse Voltages.
T
rr
– REVERSE RECOVERY TIME (ns)
10
100
1000
10 20 30
V
R
= 5V
V
R
= 10V
V
R
= 20V
Figure 2. Typical RF Resistance vs. Forward Bias
Current.
0.01 100
1000
1
10
RF RESISTANCE (OHMS)
BIAS CURRENT (mA)
10
100
10.1
T
A
= +85 C
T
A
= +25 C
T
A
= –55 C
100
10
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
I
F
– FORWARD CURRENT (mA)
V
F
– FORWARD VOLTAGE (mA)
Figure 5. Forward Current vs. Forward
Voltage.
125 C 25 C
50 C
Intercept point
will be higher
at higher
frequencies

HMPP-3865-BLK

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
RF DIODE PIN 50V MINIPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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