VS-MBR20100CT-N3

VS-MBR20...CTKPbF Series, VS-MBR20...CTK-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
1
Document Number: 94287
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 10 A
FEATURES
150 °C T
J
operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
2 x 10 A
V
R
80 V, 90 V, 100 V
V
F
at I
F
0.65 V
I
RM
max. 6 mA at 125 °C
T
J
max. 150 °C
Diode variation Common cathode
E
AS
24 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform (per device) 20 A
V
RRM
80 to 100 V
I
FRM
T
C
= 133 °C (per leg) 20
A
I
FSM
t
p
= 5 μs sine 850
V
F
10 A
pk
, T
J
= 125 °C 0.65 V
T
J
Range - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-
MBR2080CTKPbF
VS-
MBR2080CTK-N3
VS-
MBR2090CTKPbF
VS-
MBR2090CTK-N3
VS-
MBR20100CTKPbF
VS-
MBR20100CTK-N3
UNITS
Maximum DC
reverse voltage
V
R
80 80 90 90 100 100 V
Maximum
working peak
reverse voltage
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
I
F(AV)
T
C
= 133 °C, rated V
R
10
A
per device 20
Peak repetitive forward current per leg I
FRM
Rated V
R
, square wave, 20 kHz, T
C
= 133 °C 20
Non-repetitive peak surge current I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
850
Surge applied at rated load conditions half wave,
single phase, 60 Hz
150
Peak repetitive reverse surge current I
RRM
2.0 µs, 1.0 kHz 0.5
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 12 mH 24 mJ
VS-MBR20...CTKPbF Series, VS-MBR20...CTK-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
2
Document Number: 94287
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
10 A
T
J
= 25 °C
0.80
V
20 A 0.95
10 A
T
J
= 125 °C
0.65
20 A 0.80
Maximum instantaneous reverse
current
I
RM
(1)
T
J
= 25 °C
Rated DC voltage
0.10
mA
T
J
= 125 °C 6
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.433 V
Forward slope resistance r
t
15.8 m
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 400 pF
Typical series inductance L
S
Measured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
- 65 to 150
°C
Maximum storage temperature range T
Stg
- 65 to 175
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation 2.0
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB
MBR2080CTK
MBR2090CTK
MBR20100CTK
VS-MBR20...CTKPbF Series, VS-MBR20...CTK-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
3
Document Number: 94287
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
10
0.8
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0.40.2 0.6 1.0 1.2
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
94287_01
0.1
1
10
100
0.0001
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
100804020
0.01
0.001
60
T
J
= 150 °C
T
J
= 25 °C
T
J
= 50 °C
T
J
= 100 °C
T
J
= 125 °C
T
J
= 75 °C
94287_02
1000
0 80
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
40
10
10060
20
100
T
J
= 25 °C
94287_03
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P
DM
t
1
t
2
10
0.01
94287_04

VS-MBR20100CT-N3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-MBR20100CT-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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