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MRF904

P1-P3P4-P4
MRF904
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
Designed primarily for use in High Gain, low noise general-purpose amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
Collector-Emitter Voltage 15
Vdc
V
CBO
Collector-Base Voltage 25 Vdc
V
EBO
Emitter-Base Voltage 3.0 Vdc
I
C
Collector Current 30 mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25ºC
Derate above 25ºC
200
1.14
mWatts
mW/ ºC
T
JMAX
Junction Temperature 200 °C
T
STORAGE
Storage Temperature -65 to +200 °C
1
2
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
Features
• Silicon NPN, high Frequency, To-72 packaged, Transistor
• High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz
7 dB (typ) @ f = 1 GHz
• Low Noise Figure
NF = 1.5 dB (typ) @ f = 450 MHz
• High F
T
-
4 GHz (typ) @ IC = 15 mAdc
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF904
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Value
Symbol Test Conditions
Min. Typ. Max.
Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
15
-
-
Vdc
BVCBO Collector-Base Breakdown Voltage
(IC= .1 mAdc, IE=0)
25
-
-
Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
3.0
-
-
Vdc
ICBO Collector Cutoff Current
(VCE = 15 Vdc, IE = 0 Vdc)
-
-
50
nA
(on)
HFE DC Current Gain
(IC = 5.0 mAdc, VCE = 5 Vdc)
30
-
200
-
DYNAMIC
Value
Symbol Test Conditions
Min. Typ. Max.
Unit
f
T
Current-Gain - Bandwidth Product
(IC = 15 mAdc, VCE = 10 Vdc, f = 1 GHz)
-
4.0
-
GHz
CCB
Junction Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz)
-
-
1.5
pF
NF
Noise Figure
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz)
-
1.5
-
dB
MRF904
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Functional
Value
Symbol Test Conditions
Min. Typ. Max.
Unit
G
U
max
Maximum Unilateral Gain (1)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz)
-
-
11
7
-
-
dB
S
|21|
2
Maximum Available Gain (1)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz)
9.5
-
10.5
6.5
-
-
dB
MAG
Maximum Available Gain (1)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz)
-
-
11
7
-
-
dB
(1) Maximum Unilateral Gain = |S21|
2
/ (1 - |S11|
2
) (1 - |S22|
2
)
Table 1. Common Emitter S-Parameters, @ VCE = 5 V, IC = 6 mA
f S11 S21 S12 S22
(MHz)
|S11|
∠ φ
|S21|
∠ φ
|S12|
∠ φ
|S22|
∠ φ
100 .66 -37 10.5 131 .040 71 .781 -23
200 .41 -52 7.03 111 .065 71 .597 -27
300 .31 -54 5.33 98 .093 70 .551 -26
400 .26 -59 4.00 90 .111 69 .517 -30
500 .20 -61 3.38 87 .136 71 .467 -30
600 .18 -59 3.00 81 .162 68 .455 -32
700
.16 -60 2.69 75 .186 66 .438 -36
800 .16 -66 2.30 70 .200 63 .437 -42
900
.15 -74 2.16 71 .215 65 .409 -47
1000 .15 -76 2.16 63 .243 62 .413 -48
P1-P3P4-P4

MRF904

Mfr. #:
Buy MRF904
Manufacturer:
Microchip / Microsemi
Description:
RF Bipolar Transistors Comm/Bipolar Transistor
Lifecycle:
New from this manufacturer.
Delivery:
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