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SS1H10HE3_A/H

P1-P3P4-P4
SS1H9, SS1H10
www.vishay.com
Vishay General Semiconductor
Revision: 18-Dec-14
1
Document Number: 88747
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High-Voltage Surface Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low powevr losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
90 V, 100 V
I
FSM
50 A
V
F
0.62 V
I
R
1.0 μA
T
J
max. 175 °C
Package DO-214AC (SMA)
Diode variations Single
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS1H9 SS1H10 UNIT
Device marking code S9 S10
Maximum repetitive peak reverse voltage V
RRM
90 100 V
Working peak reverse voltage V
RWM
90 100 V
Maximum DC blocking voltage V
DC
90 100 V
Maximum average forward rectified current (fig. 1) I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
50 A
Peak repetitive reverse surge current at t
p
= 2.0 μs, 1 kHz I
RRM
1.0 A
Storage temperature range T
STG
-65 to +175 °C
Maximum operating temperature T
J
175 °C
SS1H9, SS1H10
www.vishay.com
Vishay General Semiconductor
Revision: 18-Dec-14
2
Document Number: 88747
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL SS1H9 SS1H10 UNIT
Maximum instantaneous forward voltage
(1)
I
F
= 1.0 A
T
J
= 25 °C
V
F
0.77
V
T
J
= 125 °C 0.62
I
F
= 2.0 A
T
J
= 25 °C 0.86
T
J
= 125 °C 0.70
Maximum reverse current at rated V
R
(2)
T
J
= 25 °C
I
R
1.0 μA
T
J
= 125 °C 0.5 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS1H9 SS1H10 UNIT
Maximum thermal resistance
(1)
R
JA
88
°C/W
R
JL
30
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SS1H10-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel
SS1H10-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
SS1H10HE3_A/H
(1)
0.064 H 1800 7" diameter plastic tape and reel
SS1H10HE3_A/I
(1)
0.064 I 7500 13" diameter plastic tape and reel
SS1H10HE3_B/H
(1)
0.064 H 1800 7" diameter plastic tape and reel
SS1H10HE3_B/I
(1)
0.064 I 7500 13" diameter plastic tape and reel
0
0.2
0.4
0.6
0.8
1.0
1.2
Lead Temperature (°C)
Average Forward Current (A)
25 50 75 100 125 150 175
0
10
20
30
40
50
60
1 10 100
Number of Cycles at 60 Hz
Average Forward Current (A)
SS1H9, SS1H10
www.vishay.com
Vishay General Semiconductor
Revision: 18-Dec-14
3
Document Number: 88747
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.01
0.1
1
10
100
1000
10 000
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
10
100
1000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
1
10
100
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
P1-P3P4-P4

SS1H10HE3_A/H

Mfr. #:
Buy SS1H10HE3_A/H
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers 100 Volt 1.0 Amp 50 Amp IFSM
Lifecycle:
New from this manufacturer.
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