SQJ446EP
www.vishay.com
Vishay Siliconix
S15-2451-Rev. A, 19-Oct-15
1
Document Number: 62873
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
c
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
d. See solder profile (
www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) 40
R
DS(on)
(Ω) at V
GS
= 10 V 0.0050
R
DS(on)
(Ω) at V
GS
= 4.5 V 0.0075
I
D
(A) 60
Configuration Single
Package PowerPAK SO-8L
PowerPAK
®
SO-8L Single
2
S
3
S
4
G
1
S
D
Bottom View
1
6.15 mm
5.13 mm
Top View
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
40
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
60
A
T
C
= 125 °C 35
Continuous Source Current (Diode Conduction) I
S
42
Pulsed Drain Current
a
I
DM
200
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
42
Single Pulse Avalanche Energy E
AS
88 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
46
W
T
C
= 125 °C 15
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
65
°C/W
Junction-to-Case (Drain) R
thJC
3.2