TSM4425
30V P-Channel MOSFET
Document Number: DS_P0000094 1 Version: C15
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switches
● Notebook PCs
● Desktop PCs
Ordering Information
Part No. Package
Packing
TSM4425CS RLG
SOP-8 2.5Kpcs / 13” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Absolute Maximum Rating (T
C
= 25°C unless otherwise noted)
Parameter S
ymbol Limit Unit
Drain-Source Voltage V
-30 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current I
-11 A
Pulsed Drain Current I
DM
-50 A
Continuous Source Current (Diode Conduction)
a,b
I
-2.1 A
Maximum Power Dissipation
Ta = 25°C
P
D
2.5
W
Ta = 75°C 1.6
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
, T
- 55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Foot Thermal Resistance R
18 °C/W
Junction to Ambient Thermal Resistance (PCB mounted) R
ӨJA
52.5 °C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
P
RODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
D
(A)
-30
14 @ V
GS
= -10V -11
20 @ V
GS
= -4.5V -8.5
1. Source 8. Drain
2. Source 7. Drain
4. Gate 5. Drain
