DS1609S-50+

DS1609
020499 4/7
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground –0.5V to +7.0V
Operating Temperature –40°C to +85°C
Storage Temperature –55°C to +125°C
Soldering Temperature 260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS (–40°C to +85°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Power Supply V
CC
4.5 5.0 5.5 V 1
Input Logic 1 V
IH
2.0 V
CC
+ 0.3 V 1
Input Logic 0 V
IL
–0.3 +0.8 V 1
DC ELECTRICAL CHARACTERISTICS (–40°C to +85°C; V
CC
= 5V ± 10%)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Impedance Z
IN
50K 2
CE, WE, OE Leakage I
LO
–1.0 +1.0 µA
Standby Current I
CCS1
3.0 5.0 mA 3, 4, 13
Standby Current I
CCS2
50 300 µA 3, 5, 13
Standby Current I
CCS3
100 nA 3, 6, 13
Operating Current I
CC
18 30 mA 7, 13
Logic 1 Output V
OH
2.4 V 8
Logic 0 Output V
OL
0.4 V 9
CAPACITANCE (t
A
= 25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Capacitance C
IN
5 10 pF
I/O Capacitance C
I/O
5 10 pF
DS1609
020499 5/7
AC ELECTRICAL CHARACTERISTICS (–40°C to +85°C; V
CC
= 5V ± 10%)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Address Setup Time t
AS
5 ns
Address Hold Time t
AH
25 ns
Output Enable Access t
OEA
0 50 ns 10
OE to High Z t
OEZ
0 20 ns
CE to High Z t
CEZ
0 20 ns
Data Setup Time t
DS
0 ns
Data Hold Time t
DH
10 ns
Write Pulse Width t
WP
50 ns 11
CE Recovery Time t
CER
20 ns 12
WE Recovery Time t
WER
20 ns 12
OE Recovery Time t
OER
20 ns 12
CE to OE Setup Time t
COE
25 ns
CE to WE Setup Time t
CWE
25 ns
AC ELECTRICAL CHARACTERISTICS (–40°C to +85°C; V
CC
= 2.5V – 4.5V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Address Setup Time t
AS
5 ns
Address Hold Time t
AH
25 ns
Output Enable Access t
OEA
0 100 ns 10
OE to High Z t
OEZ
0 20 ns
CE to High Z t
CEZ
0 20 ns
Data Setup Time t
DS
0 ns
Data Hold Time t
DH
10 ns
Write Pulse Width t
WP
100 ns 11
CE Recovery Time t
CER
20 ns 12
WE Recovery Time t
WER
20 ns 12
OE Recovery Time t
OER
20 ns 12
CE to OE Setup Time t
COE
25 ns
CE to WE Setup Time t
CWE
25 ns
DS1609
020499 6/7
DUAL PORT RAM TIMING: READ CYCLE
AD0 – AD7
DURING READ CYCLE WE = V
IH
ADDRESS VALID DON’T CARE DATA OUT VALID
t
AS
t
AH
t
COE
t
OEA
t
OEZ
t
CEZ
CE
OE
NOTES:
1. During read cycle the address must be off the bus prior to t
OEA
minimum to avoid bus contention.
2. Read cycles are terminated by the first occurring rising edge of OE
or CE.
DUAL PORT RAM TIMING: WRITE CYCLE
AD0 – AD7
DURING WRITE CYCLE OE = V
IH
ADDRESS VALID DON’T CARE DATA IN VALID
t
AS
t
AH
t
CWE
t
DH
CE
WE
t
DS
t
WP
NOTE:
1. Write cycles are terminated by the first occurring edge of WE or CE.

DS1609S-50+

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
RAM Miscellaneous Dual Port RAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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