VS-16TTS08FP-M3, VS-16TTS12FP-M3
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Vishay Semiconductors
Revision: 24-Aug-17
5
Document Number: 96299
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-16TTS08FP-M3 50 1000 Antistatic plastic tubes
VS-16TTS12FP-M3 50 1000 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96155
Part marking information www.vishay.com/doc?95456
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4)
(3)
(2)
(1)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
b)Recommended load line for
VGD
IGD
Frequency Limited by PG (AV)
a)Recommended load line for
rated di/dt: 10 V, 20 Ω
tr = 0.5 μs, tp >= 6 μs
<= 30% rated di/dt: 10 V, 65 Ω
tr = 1 μs, tp >= 6 μs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
T
J
= -10 °C
2 - Current rating, RMS value
3 - Circuit configuration:
4 - Package:
5
6
- Voltage code x 100 = V
RRM
T = single thyristor
- Type of silicon:
T = TO-220AB
S = converter grade
8 -
08 = 800 V
12 = 1200 V
7 - FullPAK
Device code
62 43 5 7 8
16 T T S 12 FP -M3
VS-
1
1 - Vishay Semiconductors product
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
