VS-16TTS08FP-M3, VS-16TTS12FP-M3
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Vishay Semiconductors
Revision: 24-Aug-17
2
Document Number: 96299
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Maximum average on-state current I
T(AV)
T
C
= 70 °C, 180° conduction, half sine wave 10
A
Maximum RMS on-state current I
RMS
16
Maximum peak, one-cycle,
non-repetitive surge current
I
TSM
10 ms sine pulse, rated V
RRM
applied 170
10 ms sine pulse, no voltage reapplied 200
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 144
A
2
s
10 ms sine pulse, no voltage reapplied 200
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 2000 A
2
s
Maximum on-state voltage drop V
TM
10 A, T
J
= 25 °C 1.4 V
On-state slope resistance r
t
T
J
= 125 °C
24.0 m
Threshold voltage V
T(TO)
1.1 V
Maximum reverse and direct leakage current I
RM
/I
DM
T
J
= 25 °C
V
R
= Rated V
RRM
/V
DRM
0.5
mA
T
J
= 125 °C 10
Holding current I
H
Anode supply = 6 V, resistive load, initial I
T
= 1 A
16TTS08FP, 16TTS12FP, T
J
= 25 °C
- 150
Maximum latching current I
L
Anode supply = 6 V, resistive load, T
J
= 25 °C 200
Maximum rate of rise of off-state voltage dV/dt T
J
= T
J
max., linear to 80 %, V
DRM
= R
g
- k = Open 500 V/μs
Maximum rate of rise of turned-on current dI/dt 150 A/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
8.0
W
Maximum average gate power P
G(AV)
2.0
Maximum peak positive gate current + I
GM
1.5 A
Maximum peak negative gate voltage - V
GM
10 V
Maximum required DC gate current to trigger I
GT
Anode supply = 6 V, resistive load, T
J
= -10 °C 90
mA
Anode supply = 6 V, resistive load, T
J
= 25 °C 60
Anode supply = 6 V, resistive load, T
J
= 125 °C 35
Maximum required DC gate
voltage to trigger
V
GT
Anode supply = 6 V, resistive load, T
J
= -10 °C 3.0
V
Anode supply = 6 V, resistive load, T
J
= 25 °C 2.0
Anode supply = 6 V, resistive load, T
J
= 125 °C 1.0
Maximum DC gate voltage not to trigger V
GD
T
J
= 125 °C, V
DRM
= Rated value
0.25
Maximum DC gate current not to trigger I
GD
2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t
gt
T
J
= 25 °C 0.9
μsTypical reverse recovery time t
rr
T
J
= 125 °C
4
Typical turn-off time t
q
110
