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2N4931

P1-P2
TECHNICAL DATA
PNP HIGH VOLTAGE SILICON TRANSISTOR
Qualified per MIL-PRF-19500/397
Devices Qualified Level
2N3743 2N4930 2N4931
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings Sym 2N3743
2N4930
2N4931
Unit
Collector-Emitter Voltage
V
CEO
300 200 250 Vdc
Collector-Base Voltage
V
CBO
300 200 250 Vdc
Emitter-Base Voltage
V
EBO
5.0 Vdc
Collector Current
I
C
200 mAdc
Total Power Dissipation @T
A
= +25
0
C
1
@T
C
= +25
0
C
2
P
T
1.0
5.0
W
W
Operating & Storage Junction Temperature Range
T
J
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance Junction-to-Case
R
θJC
35
0
C/W
1) Derate linearly 5.71 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 28.6 mW/
0
C for T
C
> +25
0
C
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mAdc 2N3743
2N4930
2N4931
V
(BR)
CEO
300
200
250
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 100 µAdc 2N3743
2N4930
2N4931
V
(BR)
CBO
300
200
250
Vdc
Emitter-Base Breakdown Voltage
I
E
= 100 µAdc
V
(BR)
EBO
5.0 Vdc
Collector-Base Cutoff Current
V
CB
= 250 Vdc 2N3743
V
CB
= 150 Vdc 2N4930
V
CB
= 200 Vdc 2N4931
I
CBO
250
250
250
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3743, 2N4930, 2N4931, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
Emitter-Base Cutoff Current
V
EB
= 4.0 Vdc
I
EBO
150
ηAdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 30 mAdc, V
CE
= 10 Vdc
I
C
= 50 mAdc, V
CE
= 20 Vdc
h
FE
30
40
40
50
30
200
Collector-Emitter Saturation Voltage
I
C
= 30 mAdc, I
B
= 3.0 mAdc
I
C
= 10 mAdc, I
B
= 1.0 mAdc
V
CE(sat)
1.2
1.0
Vdc
Base-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 30 mAdc, I
B
= 3.0 mAdc
V
BE(sat)
1.0
1.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 20 MHz
h
fe
2.0 8.0
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
h
fe
30 300
Output Capacitance
V
CB
= 20 Vdc, I
E
= 0, f ≥ 0.1 MHz
C
obo
15 pF
Input Capacitance
V
EB
= 1.0 Vdc, I
C
= 0, f ≥ 0.1 MHz
C
ibo
400 pF
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t ≥ 1.0 s
Test 1
V
CE
= 20 Vdc, I
C
= 50 mAdc All Types
Test 2
V
CE
= 100 Vdc, I
C
= 10 mAdc All Types
Test 3
V
CE
= 300 Vdc, I
C
= 3.3 mAdc 2N3743
V
CE
= 200 Vdc, I
C
= 5.0 mAdc 2N4930
V
CE
= 250 Vdc, I
C
= 4.0 mAdc 2N4931
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
P1-P2

2N4931

Mfr. #:
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Manufacturer:
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Description:
Bipolar Transistors - BJT Power BJT
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