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STF25N60M2-EP

P1-P3P4-P6P7-P9P10-P12P13-P14
Electrical characteristics
STF25N60M2-EP
4/14
DocID027251 Rev 2
2 Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 5: On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
V
GS
= 0 V, I
D
= 1 mA 600
V
I
DSS
Zero gate voltage Drain
current
V
GS
= 0 V, V
DS
= 600 V
1 µA
V
GS
= 0 V, V
DS
= 600 V,
T
C
= 125 °C
100 µA
I
GSS
Gate-body leakage
current
V
DS
= 0 V, V
GS
= ±25 V
±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 9 A
0.175 0.188 Ω
Table 6: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
- 1090 - pF
C
oss
Output capacitance - 56 - pF
C
rss
Reverse transfer
capacitance
- 1.6 - pF
C
oss eq.
(1)
Equivalent output
capacitance
V
DS
= 0 to 480 V, V
GS
= 0 V - 255 - pF
R
G
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A - 7 - Ω
Q
g
Total gate charge
V
DD
= 480 V, I
D
= 18 A,
V
GS
= 10 V (see Figure 16:
"Gate charge test circuit")
- 29 - nC
Q
gs
Gate-source charge - 6 - nC
Q
gd
Gate-drain charge - 12 - nC
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Table 7: Switching Energy
Symbol Parameter Test conditions Min. Typ. Max. Unit
E
(off)
Turn-off energy
(from 90% V
GS
to 0% I
D
)
V
DD
= 400 V, I
D
= 2 A
R
G
= 4.7 Ω, V
GS
= 10 V
- 7 - µJ
V
DD
= 400 V, I
D
= 4 A
R
G
= 4.7 Ω, V
GS
= 10 V
- 8 - µJ
STF25N60M2-EP
Electrical characteristics
DocID027251 Rev 2
5/14
Table 8: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time V
DD
= 300 V, I
D
= 9 A
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 15: "Switching
times test circuit for
resistive load" and Figure
20: "Switching time
waveform")
- 15 - ns
t
r
Rise time - 10 - ns
t
d(off)
Turn-off-delay time - 61 - ns
t
f
Fall time - 16 - ns
Table 9: Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current
-
18 A
I
SDM
(1)
Source-drain current
(pulsed)
-
72 A
V
SD
(2)
Forward on voltage V
GS
= 0 V, I
SD
= 18 A -
1.6 V
t
rr
Reverse recovery time
I
SD
= 18 A,
di/dt = 100 A/µs,
V
DD
= 100 V (see Figure
17: " Test circuit for
inductive load switching
and diode recovery times")
- 360
ns
Q
rr
Reverse recovery charge - 5
µC
I
RRM
Reverse recovery current - 28
A
t
rr
Reverse recovery time
I
SD
= 18 A,
di/dt = 100 A/µs,
V
DD
= 100 V, T
j
= 150 °C
(see Figure 17: " Test
circuit for inductive load
switching and diode
recovery times")
- 445
ns
Q
rr
Reverse recovery charge - 6.5
µC
I
RRM
Reverse recovery current - 29
A
Notes:
(1)
Pulse width is limited by safe operating area
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics
STF25N60M2-EP
6/14
DocID027251 Rev 2
2.2 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source
voltage
Figure 7: Static drain-source on-resistance
GIPG021220141118ALS
I
D
(A)
10
1
0.1
0.1
1
100
V
DS
(V)
10
10µs
100µs
1ms
10ms
Operation in this area
is limited by max R
DS(on)
T
j
=150°C
T
C
=25°C
Single pulse
I
D
(A)
15
10
5
0
0
8
V
DS
(V)
4
12
20
25
30
35
40
16
V
GS
= 6,7,8,9,10 V
V
GS
= 5 V
V
GS
= 4 V
GIPG011220141438ALS
GIPG281120141611ALS
I
D
(A)
5
0
0 4 V
GS
(V)82 6
10
15
V
DS
= 16 V
20
25
30
35
40
6
4
2
0
0 5 20
8
10 15
10
25
300
200
100
0
400
500
12
30
600
V
DD
= 480 V
V
DS
V
GS
(V)
Q
g
(nC)
V
DS
(V)
GIPG011220140958ALS
0.177
0.174
0.171
0.168
0
4
12
8
16
0.180
0.183
0.186
V
GS
= 10 V
R
DS(on)
(Ω)
I
D
(A)
GIPG011220141210ALS
P1-P3P4-P6P7-P9P10-P12P13-P14

STF25N60M2-EP

Mfr. #:
Buy STF25N60M2-EP
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 600V 18A EP TO220FP
Lifecycle:
New from this manufacturer.
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