IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYP20N65C3D1M
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 20A, V
CE
= 10V, Note 1 7 12 S
C
ie
s
822 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 67 pF
C
res
19 pF
Q
g(on)
30 nC
Q
ge
I
C
= 20A, V
GE
= 15V, V
CE
= 0.5 • V
CES
6 nC
Q
gc
15 nC
t
d(on)
19 ns
t
ri
34 ns
E
on
0.43 mJ
t
d(off)
80 ns
t
fi
28 ns
E
of
f
0.35 0.65 mJ
t
d(on)
18 ns
t
ri
33 ns
E
on
0.70 mJ
t
d(off)
96 ns
t
fi
36 ns
E
off
0.40 mJ
R
thJC
3.00 °C/W
Inductive load, T
J
= 25°C
I
C
= 20A, V
GE
= 15V
V
CE
= 400V, R
G
= 20
Note 2
Inductive load, T
J
= 150°C
I
C
= 20A, V
GE
= 15V
V
CE
= 400V, R
G
= 20
Note 2
Pins: 1 - Gate
2 - Collector
3 - Emitter
OVERMOLDED TO-220 (IXYP) Outline
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 10A, V
GE
= 0V, Note 1 3.0 V
T
J
= 125C 1.7 V
I
RM
2.5 A
t
rr
110 ns
t
rr
30 ns
R
thJC
4.0 °C/W
I
F
= 12A, V
GE
= 0V,
-di
F
/dt = 100A/μs, V
R
= 100V, T
J
= 125°C
I
F
= 1A, V
GE
= 0V, -di
F
/dt = 100A/μs, V
R
= 30V
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
