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4
Document Number 81242
Rev. 1.1, 31-Aug-07
Vishay Semiconductors
VLMB/BG/TG31..
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Figure 1. Forward Current vs. Ambient Temperature for InGaN
Figure 2. Forward Current vs. Forward Voltage
Figure 3. Specific Luminous Flux vs. Forward Current
0
5
10
15
20
25
0
T
amb
- Ambient Temperature (°C)
16806
I
F
- Forward Current (mA)
10 20 30 40 50 60 70 80 11010090
0
10
20
30
40
50
60
70
80
90
100
2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
F
- Forward Voltage (V)
19918
I
F
- Forward Current (mA)
0.01
0.1
1
10
1
10 100
I
F
- Forward Current (mA)16194
I - Relative Luminous Intensity
Vrel
Figure 4. Relative Intensity vs. Wavelength
Figure 5. Relative Intensity vs. Wavelength
Figure 6. Relative Intensity vs. Wavelength
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
400 420 440 460 480 500 520 540 560
λ - Wavelength (nm)
16069
I
V rel
- Relative Luminous Intensity
blue
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
420 440 460 480 500 520 540 560 580 600
16070
blue green
I- Relative Luminous Intensity
Vrel
λ - Wavelength (nm)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
460 480 500 520 540 560 580 600 620
λ - Wavelength (nm)
16068
I
V rel
- Relative Luminous Intensity
true green
