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NVMFD5877NLT3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 9
1 Publication Order Number:
NVMFD5877NL/D
NVMFD5877NL
Power MOSFET
60 V, 39 mW, 17 A, Dual N−Channel, Logic
Level, Dual SO8FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVMFD5877NLWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage V
GS
"20 V
Continuous Drain Cur
-
rent R
Y
J−mb
(Notes 1,
2, 3, 4)
Steady
State
T
mb
= 25°C
I
D
17
A
T
mb
= 100°C 12
Power Dissipation
R
Y
J−mb
(Notes 1, 2, 3
)
T
mb
= 25°C
P
D
23
W
T
mb
= 100°C 12
Continuous Drain Cur
-
rent R
q
JA
(Notes 1 &
3, 4)
Steady
State
T
A
= 25°C
I
D
6
A
T
A
= 100°C 5
Power Dissipation
R
q
JA
(Notes 1, 3)
T
A
= 25°C
P
D
3.2
W
T
A
= 100°C 1.6
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
74 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
+175
°C
Source Current (Body Diode) I
S
19 A
Single Pulse Drain−
to−Source Avalanche
Energy (T
J
= 25°C,
V
DD
= 24 V, V
GS
=
10 V, R
G
= 25 W)
(I
L(pk)
= 14.5 A, L =
0.1 mH)
E
AS
10.5
mJ
(I
L(pk)
= 6.3 A, L =
2 mH)
40
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Note 2, 3)
R
Y
J−mb
6.5
°C/W
Junction−to−Ambient − Steady State (Note 3)
R
q
JA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
ORDERING INFORMATION
http://onsemi.com
Device Package Shipping
†
V
(BR)DSS
R
DS(on)
MAX I
D
MAX
60 V
39 mW @ 10 V
17 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DFN8 5x6
(SO8FL)
CASE 506BT
MARKING DIAGRAM
60 mW @ 4.5 V
NVMFD5877NLT1G DFN8
(Pb−Free)
1500 / Tape &
Reel
NVMFD5877NLT3G DFN8
(Pb−Free)
5000 / Tape &
Reel
D1
D1
D2
D2
S1
G1
S2
G2
Dual N−Channel
D1
S1
G1
5877xx
AYWZZ
D2
D1
D2
S2
G2
D2
D1
1
NVMFD5877NLWFT1G DFN8
(Pb−Free)
1500 / Tape &
Reel
NVMFD5877NLWFT3G DFN8
(Pb−Free)
5000 / Tape &
Reel
5877NL = Specific Device Code
for NVMFD5877NL
5877LW = Specific Device Code
for NVMFD5877NLWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
NVMFD5877NL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
53 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
1.0
mA
T
J
= 125°C
10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 3.0 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
3.5 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 7.5 A
31 39
mW
V
GS
= 4.5 V I
D
= 7.5 A
42 60
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 5.0 A 7.0 S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
540
pF
Output Capacitance C
oss
55
Reverse Transfer Capacitance C
rss
36
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 5.0 A
5.9
nC
Threshold Gate Charge Q
G(TH)
0.62
Gate−to−Source Charge Q
GS
1.64
Gate−to−Drain Charge Q
GD
2.80
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 48V, I
D
= 5.0A 11 20 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 5.0 A, R
G
= 2.5 W
8.1
ns
Rise Time t
r
15.8
Turn−Off Delay Time t
d(off)
11.8
Fall Time t
f
3.9
Turn−On Delay Time t
d(on)
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 5.0 A, R
G
= 2.5 W
4.9
ns
Rise Time t
r
6.4
Turn−Off Delay Time t
d(off)
14.5
Fall Time t
f
2.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 5.0 A
T
J
= 25°C
0.8 1.2
V
T
J
= 125°C
0.7
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 5.0 A
14.5
ns
Charge Time t
a
11.5
Discharge Time t
b
3.1
Reverse Recovery Charge Q
RR
11 nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
0.93
nH
Drain Inductance L
D
0.005
Gate Inductance L
G
1.84
Gate Resistance R
G
1.5
W
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NVMFD5877NL
http://onsemi.com
3
TYPICAL CHARACTERISTICS
012345
Figure 1. On−Region Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
5 V
3.5 V
V
GS
= 10 V
4.0 V
4.5 V
T
J
= 25°C
3.0 V
0
4
8
12
16
20
24
28
32
0
10
20
30
1234
5
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
0.025
0.030
0.035
0.040
0.045
0.050
34 6 8 105
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
I
D
= 10 A
T
J
= 25°C
0.025
0.035
0.045
0.055
0.065
5 1015202
5
81318
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
−50 −25 0 25 50 75 100 125 175
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
V
GS
= 10 V
I
D
= 7.5 A
1E−04
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (A)
T
J
= 125°C
T
J
= 150°C
V
GS
= 0 V
36
40
0.055
0.060
0.065
79 23
0.030
0.040
0.050
0.060
150
T
J
= 25°C
5 101520253035404550556
0
1E−05
1E−06
1E−07
1E−08
1E−09
1E−10
1E−11
1E−12
P1-P3P4-P6

NVMFD5877NLT3G

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Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 60V 17A 39MOHM
Lifecycle:
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