PMEGXX05EH_EJ_SER_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 4 of 13
NXP Semiconductors
PMEGxx05EH/EJ series
0.5 A very low V
F
MEGA Schottky barrier rectifiers
6. Thermal characteristics
[1] Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse power
losses P
R
and I
F(AV)
rating will be available on request.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
[1][2]
SOD123F - - 330 K/W
SOD323F - - 350 K/W
[1][3]
--150K/W
R
th(j-sp)
thermal resistance from junction
to solder point
SOD123F - - 60 K/W
SOD323F - - 55 K/W
