2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
S11-1542-Rev. D, 01-Aug-11
1
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com/doc?67884
N-Channel 90 V (D-S) MOSFET
FEATURES
• Military Qualified
• Low On-Resistence: 3.6 :
• Low Threshold: 1.6 V
• Low Input Capacitance: 35 pF
• Fast Switching Speed: 6 ns
• Low Input and Output Leakage
BENEFITS
• Guaranteed Reliability
•Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Hi-Rel Systems
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
•Solid-State Relays
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
PRODUCT SUMMARY
V
DS
(V) 90
R
DS(on)
(:) at V
GS
= 10 V 4
Configuration Single
1
2 3
TO-205AD
(TO-39)
Top View
DG
S
ORDERING INFORMATION
PART PACKAGE
DESCRIPTION/DSCC
PART NUMBER
VISHAY ORDERING
PART NUMBER
2N6661
TO-205AD
(TO-39)
Commercial 2N6661
Commercial, Lead (Pb)-free 2N6661-E3
2N6661-2 See -2 Flow Document 2N6661-2
2N6661JANTX
JANTX2N6661 (std Au leads) 2N6661JTX02
JANTX2N6661 (with solder) 2N6661JTXL02
JANTX2N6661P (with PIND) 2N6661JTXP02
2N6661JANTXV
JANTXV2N6661 (std Au leads) 2N6661JTXV02
JANTXV2N6661P (with PIND) 2N6661JTVP02
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
V
DS
90
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
0.86
A
T
C
= 100 °C
0.54
Pulsed Drain Current
a
I
DM
3
Maximum Power Dissipation
T
C
= 25 °C
P
D
6.25
W
T
A
= 25 °C
0.725
Thermal Resistance, Junction-to-Ambient
b
R
thJA
170
°C/W
Thermal Resistance, Junction-to-Case
R
thJC
20
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C