OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

2N6661JTXV02

P1-P3P4-P6
2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
S11-1542-Rev. D, 01-Aug-11
1
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com/doc?67884
N-Channel 90 V (D-S) MOSFET
FEATURES
• Military Qualified
• Low On-Resistence: 3.6 :
• Low Threshold: 1.6 V
• Low Input Capacitance: 35 pF
• Fast Switching Speed: 6 ns
• Low Input and Output Leakage
BENEFITS
• Guaranteed Reliability
•Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Hi-Rel Systems
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
•Solid-State Relays
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
PRODUCT SUMMARY
V
DS
(V) 90
R
DS(on)
(:) at V
GS
= 10 V 4
Configuration Single
1
2 3
TO-205AD
(TO-39)
Top View
DG
S
ORDERING INFORMATION
PART PACKAGE
DESCRIPTION/DSCC
PART NUMBER
VISHAY ORDERING
PART NUMBER
2N6661
TO-205AD
(TO-39)
Commercial 2N6661
Commercial, Lead (Pb)-free 2N6661-E3
2N6661-2 See -2 Flow Document 2N6661-2
2N6661JANTX
JANTX2N6661 (std Au leads) 2N6661JTX02
JANTX2N6661 (with solder) 2N6661JTXL02
JANTX2N6661P (with PIND) 2N6661JTXP02
2N6661JANTXV
JANTXV2N6661 (std Au leads) 2N6661JTXV02
JANTXV2N6661P (with PIND) 2N6661JTVP02
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
V
DS
90
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
0.86
A
T
C
= 100 °C
0.54
Pulsed Drain Current
a
I
DM
3
Maximum Power Dissipation
T
C
= 25 °C
P
D
6.25
W
T
A
= 25 °C
0.725
Thermal Resistance, Junction-to-Ambient
b
R
thJA
170
°C/W
Thermal Resistance, Junction-to-Case
R
thJC
20
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
S11-1542-Rev. D, 01-Aug-11
2
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. FOR DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW d 300 μs duty cycle d 2 %.
c. Switching time is essentially independent of operating temperature.
d. This parameter not registered with JEDEC.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
LIMITS
UNIT MIN. TYP.
b
MAX.
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
= 0 V, I
D
= 10 μA
90 125 -
V
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
0.8 1.6 2
T
A
= - 55 °C
-1.82.5
T
A
= 125 °C
0.3 1.3 -
Gate-Body Leakage
I
GSS
V
GS
= ± 20 V
V
DS
= 0 V
- - ± 100
nA
T
A
= 125 °C
- - ± 500
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V
V
DS
= 72 V
--1
μA
T
A
= 125 °C
- - 100
On-State Drain Current
b
I
D(on)
V
GS
= 10 V V
DS
= 10 V
-1.8-mA
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 5 V I
D
= 0.3 A
-3.85.3
:
V
GS
= 10 V
I
D
= 1 A
-3.64
T
A
= 125 °C
d
-6.77.5
Forward Transconductance
b
g
fs
V
DS
= 7.5 V, I
D
= 0.475 A
170 340 - mS
Diode Forward Voltage
V
SD
V
GS
= 0 V I
S
= 0.86 A
0.7 0.9 1.4 V
Dynamic
Input Capacitance
C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
-3550
pF
Output Capacitance
C
oss
-1540
Reverse Transfer Capacitance
C
rss
-210
Drain-Source Capacitance
C
ds
-30-
Switching
c
Turn-On Time
t
ON
V
DD
= 25 V, R
L
= 23 :
I
D
# 1 A, V
GEN
= 10 V, R
g
= 23 :
-610
ns
Turn-Off Time
t
OFF
-810
2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
S11-1542-Rev. D, 01-Aug-11
3
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Ohmic Region Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Output Characteristics for Low Gate Drive
On-Resistance vs. Gate-to-Source Voltage
Normalized On-Resistance
vs. Junction Temperature
V
DS
-)V( egatloV ecruoS-ot-niarD
1.0
0 1.0 2.0 3.0 4.0 5.0
0.8
0.6
0.4
0.2
0
6 V
5 V
4 V
3 V
2 V
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
-)V( egatloV ecruoS-etaG
0.5
0.4
0.3
0
0120
0.2
0.1
468
125 °C
V
DS
= 15 V
25 °C
I
D
- Drain Current (A)
T
J
= - 55 °C
I
D
- Drain Current (A)
10
8
6
0
5.25.00
4
2
1.0 1.5 2.0
V
GS
= 10 V
R
DS(on)
-
Drain-Source On-Resistance (Ω)
V
DS
- Drain-to-Source Voltage (V)
100
0 0.4 0.8 1.2 1.6 2.0
80
60
40
20
0
2.8 V
2.6 V
2.4 V
2.2 V
2.0 V
1.8 V
V
GS
= 3 V
I
D
- Drain Current (mA)
V
GS
- Gate-Source Voltage (V)
7
048121620
6
5
4
0
3
2
1
I
D
= 0.1 A
0.5 A
1.0 A
R
DS(on)
- On-Resistance (Ω)
T
J
- Junction Temperature (°C)
2.25
2.00
1.75
0.50
-50 - 05101
1.50
1.25
30 70 110
1.00
0.75
V
GS
= 10 V
R
DS(on)
-
Drain-Source On-Resistance
(Normalized)
P1-P3P4-P6

2N6661JTXV02

Mfr. #:
Buy 2N6661JTXV02
Manufacturer:
Vishay
Description:
Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet