ZTX751
Document number: DS36459 Rev. 3 - 2
4 of 7
www.diodes.com
July 2013
© Diodes Incorporated
ZTX751
Product Line o
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-80 — — V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
-60 — — V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 — — V
I
E
= -100µA
Collector Cut-off Current
I
CBO
—
—
-0.1
-10
µA
µA
V
CB
= -60V
V
CB
= -60V,T
amb
= +100°C
Emitter Cut-off Current
I
EBO
— — -0.1 µA
V
EB
= -6V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
—
-150
-280
-300
-500
mV
I
C
= -1A, I
B
= -100mA
I
C
=-2A, I
B
= -200mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
—
-0.9
-1.25 V
I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE(on)
—
-0.8
-1 V
I
C
= -1A, V
CE
= -2V
DC Current Gain (Note 10)
h
FE
70
100
80
40
200
200
170
80
—
300
—
—
—
I
C
= -50mA, V
CE
= -2V
I
C
= -500mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
Current Gain-Bandwidth Product (Note 10)
f
T
100 140 — MHz
V
CE
= -5V, I
C
= -100mA
f = 100MHz
Output Capacitance (Note 10)
C
obo
— — 30 pF
V
CB
= -10V. f = 1MHz
Turn-On Times
t
on
— 40 — ns
I
C
= -500mA, I
B1
= I
B2
= -50mA,
V
CC
= -10V
Turn-Off Times
t
off
— 450 — ns
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤2%
