OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRFH5015TRPBF

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
Notes through are on page 9
PQFN 5X6 mm
Applications
• Primary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features
Benefits
Low RDSon (< 31 m
Ω
) Lower Conduction Losses
Low Thermal Resistance to PCB (<0.8°C/W) Increased Power Density
100% Rg tested Increased Reliability
Low Profile (<0.9 mm) results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
mb
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
mb
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@ T
mb
= 25°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
8.2
44
-55 to + 150
3.6
0.029
156
V
W
A
°C
Max.
10
28
220
± 20
150
V
DS
150 V
R
DS(on) max
(@V
= 10V)
31 mΩ
Q
g (typical)
36 nC
R
G (typical)
1.7 Ω
I
D
(@T
mb
= 25°C)
44 A
IRFH5015PbF
Form
Quantity
IRFH5015PBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5015TRPBF
Base Part Number Package Type
Standard Pack
Orderable Part Number
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015
IRFH5015PbF
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
BV
DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 25.5 31
m
Ω
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 38 ––– ––– S
Q
g
Total Gate Charge ––– 36 54
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 13 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 4.6 –––
Q
gd
Gate-to-Drain Charge ––– 11 –––
Q
godr
Gate Charge Overdrive ––– 7.4 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 15.6 –––
Q
oss
Output Charge ––– 14 ––– nC
R
G
Gate Resistance ––– 1.7
–––
Ω
t
d(on)
Turn-On Delay Time ––– 9.4 –––
t
r
Rise Time ––– 9.7 –––
t
d(off)
Turn-Off Delay Time ––– 14 –––
t
f
Fall Time ––– 3.4 –––
C
iss
Input Capacitance ––– 2300 –––
C
oss
Output Capacitance ––– 205 –––
C
rss
Reverse Transfer Capacitance ––– 47 –––
Avalanche Characteristics
Parameter
Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 52 78 ns
Q
rr
Reverse Recovery Charge ––– 550 825 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
DS
= 75V
–––
V
GS
= 20V
V
GS
= -20V
––– ––– 220
––– ––– 56
Conditions
V
GS
= 0V, I
D
= 250uA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 34A
Conditions
Max.
230
34
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 34A, V
DD
= 75V
di/dt = 500A/μs
T
J
= 25°C, I
S
= 34A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
–––
R
G
=1.3
Ω
V
DS
= 50V, I
D
= 34A
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= 34A
I
D
= 34A
V
GS
= 0V
V
DS
= 50V
V
DS
= V
GS
, I
D
= 150μA
V
GS
= 10V
Typ.
V
DS
= 150V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DD
= 75V, V
GS
= 10V
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC-mb
Junction-to-Mounting Base 0.5 0.8
R
θ
JC
(Top)
Junction-to-Case
––– 15 °C/W
R
θ
JA
Junction-to-Ambient
––– 35
R
θ
JA
(<10s)
Junction-to-Ambient
––– 22
IRFH5015PbF
3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
9.0V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
≤
60μs PULSE WIDTH
Tj = 25°C
5.0V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
≤
60μs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
9.0V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
2 4 6 8 10 12 14 16
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 50V
≤
60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 34A
V
GS
= 10V
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 1020304050
Q
G
,
Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 120V
V
DS
= 75V
V
DS
= 30V
I
D
= 34A
P1-P3P4-P6P7-P9

IRFH5015TRPBF

Mfr. #:
Buy IRFH5015TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 150V SINGLE N-CH 31mOhms 33nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet