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MOCD211R1VM

P1-P3P4-P6P7-P8
5/28/03
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
Page 1 of 8
© 2003 Fairchild Semiconductor Corporation
MOCD211-M
EMITTER 1
COLLECTOR 1
ANODE 1
CATHODE 1
1
2
3
4
5
6
7
8
EMITTER 2
COLLECTOR 2
ANODE 2
CATHODE 2
DESCRIPTION
The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to
two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It
is ideally suited for high density applications and eliminates the need for through-the-board mounting.
FEATURES
•U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD211V-M)
• Minimum BV
CEO
of 30 Volts Guaranteed
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 V
AC(rms)
Guaranteed
• Compact Dual Channel Optocoupler
APPLICATIONS
• Interfacing and coupling systems of different potentials and impedances
• General purpose switching circuits
• Monitor and detection circuits
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C Unless otherwise specified)
Rating Symbol Value Unit
EMITTER
Forward Current - Continuous I
F
60 mA
Forward Current - Peak (PW = 100 µs, 120 pps) I
F
(pk) 1.0 A
Reverse Voltage V
R
6.0 V
LED Power Dissipation @ T
A
= 25°C
P
D
90 mW
Derate above 25°C 0.8 mW/°C
DETECTOR
Collector-Emitter Voltage V
CEO
30 V
Emitter-Collector Voltage V
ECO
7.0 V
Collector Current-Continuous I
C
150 mA
Detector Power Dissipation @ T
A
= 25°C
P
D
150 mW
Derate above 25°C 1.76 mW/°C
TOTAL DEVICE
Input-Output Isolation Voltage
(1,2,3)
(f = 60 Hz, 1 min. Duration)
V
ISO
2500 Vac(rms)
Total Device Power Dissipation @ T
A
= 25°C
P
D
250 mW
Derate above 25°C 2.94 mW/°C
Ambient Operating Temperature Range T
A
-40 to +100 °C
Storage Temperature Range T
stg
-40 to +125 °C
5/28/03
Page 2 of 8
© 2003 Fairchild Semiconductor Corporation
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD211-M
** Typical values at T
A
= 25°C
NOTE:
1. Input-Output Isolation Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 sec.
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ** Max Unit
EMITTER
Input Forward Voltage I
F
= 10 mA V
F
— 1.15 1.5 V
Reverse Leakage Current V
R
= 6.0 V I
R
— 0.001 100 µA
Capacitance C — 18 — pF
DETECTOR
Collector-Emitter Dark Current
V
CE
= 10 V, T
A
= 25°C I
CEO1
— 1.0 50 nA
V
CE
= 10 V, T
A
= 100°C I
CEO2
— 1.0 — µA
Collector-Emitter Breakdown Voltage I
C
= 100 µA BV
CEO
30 100 — V
Emitter-Collector Breakdown Voltage I
E
= 100 µA BV
ECO
7.0 10 — V
Collector-Emitter Capacitance f = 1.0 MHz, V
CE
= 0 V C
CE
— 7.0 — pF
COUPLED
Current Transfer Ratio
(4)
I
F
= 10 mA, V
CE
= 10 V CTR 20 — — %
Collector-Emitter Saturation Voltage I
C
= 2.0 mA, I
F
= 10 mA V
CE (sat)
——0.4 V
Tu r n-On Time
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
(fig 6.)
t
on
— 7.5 — µs
Tu r n-Off Time
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
(fig 6.)
t
off
— 5.7 — µs
Rise Time
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
(fig 6.)
t
r
— 3.2 — µs
Fall Time
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
(fig 6.)
t
f
— 4.7 — µs
Isolation Surge Voltage
(1,2,3)
f = 60 Hz, t = 1 min. V
ISO
2500 — — Vac(rms)
Isolation Resistance
(2)
V
I-O
= 500 V R
ISO
10
11
——
Ω
Isolation Capacitance
(2)
V
I-O
= 0 V, f = 1 MHz C
ISO
— 0.2 — pF
5/28/03
Page 3 of 8
© 2003 Fairchild Semiconductor Corporation
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOCD211-M
Fig. 2 Output Curent vs. Input Current
I
F
- LED INPUT CURRENT (mA)
0.1 1 10 100
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.01
0.1
1
10
V
CE
= 5V
NOR MALIZED TO I
F
= 10 mA
Fig. 3 Output Current vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (
o
C)
-80 -60 -40 -20 0 20406080100120
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.1
1
10
NORMALIZED TO T
A
= 25
o
C
Fig. 4 Output Current vs. Collector - Emitter Voltage
V
CE
- COLLECTOR -EMITTER VOLTAGE (V)
012345678910
I
C
- OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
F
= 10 mA
NORM ALIZED TO V
CE
= 5V
Fig. 5 Dark Current vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (
o
C)
020406080100
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
0.1
1
10
100
1000
10000
V
CE
=10V
I
F
- LED FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
110100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
T
A
= -55°C
T
A
= 25°C
T
A
= 100°C
P1-P3P4-P6P7-P8

MOCD211R1VM

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OPTOISO 2.5KV 2CH TRANS 8SOIC
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