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TA6F13AHM3_A/H

P1-P3P4-P5
TA6F6.8A thru TA6F51A
www.vishay.com
Vishay General Semiconductor
Revision: 04-Nov-16
1
Document Number: 89939
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
FEATURES
• Very low profile - typical height of 0.95 mm
• Junction passivation optimized design
passivated anisotropic rectifier technology
•T
J
= 185 °C capability suitable for high
reliability and automotive requirement
• Ideal for automated placement
• Uni-directional only
• Excellent clamping capability
• Peak pulse power: 600 W (10/1000 μs)
• AEC-Q101 qualified
• ESD capability: IEC 61000-4-2 level 4
- 15 kV (air)
- 8 kV (contact)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3_X -
halogen-free,
RoHS-compliant and
AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 °C per fig. 2.
(2)
Power dissipation mounted on infinite heat sink
(3)
Power dissipation mounted on minimum recommended pad layout
PRIMARY CHARACTERISTICS
V
BR
6.8 V to 51 V
V
WM
5.8 V to 43.6 V
P
PPM
(10 x 1000 μs) 600 W
P
D
at T
M
= 65 °C 6 W
T
J
max. 185 °C
Polarity Uni-directional
Package DO-221AC (SlimSMA)
DO-221AC
SlimSMA
TM
Top View
Bottom View
MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with a 10/1000 μs waveform P
PPM
(1)
600 W
Peak pulse current with a 10/1000 μs waveform I
PPM
(1)
See next table A
Power dissipation on infinite heat sink, T
M
= 65 °C P
D
(2)
6
W
Power dissipation, T
M
= 25 °C P
D
(3)
1.1
Operating junction and storage temperature range T
J
, T
STG
-65 to +185 °C
TA6F6.8A thru TA6F51A
www.vishay.com
Vishay General Semiconductor
Revision: 04-Nov-16
2
Document Number: 89939
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: t
p
50 ms
Notes
(1)
Mounted on minimum recommended pad layout
(2)
Mounted on infinite heat sink
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR
(1)
AT I
T
(V)
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
WM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
R
(μA)
T
J
= 150 °C
MAXIMUM
REVERSE
LEAKAGE AT
V
WM
I
R
(μA)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
MIN. MAX.
TA6F6.8A AEP 6.45 7.14 10 5.80
500 1000 57.1 10.5
TA6F7.5A AGP 7.13 7.88 10 6.40
250 500 53.1 11.3
TA6F8.2A AKP 7.79 8.61 10 7.02
100 200 49.6 12.1
TA6F9.1A AMP 8.65 9.55 1.0 7.78
25 50 44.8 13.4
TA6F10A APP 9.5 10.5 1.0 8.55
5.0 20 41.4 14.5
TA6F11A ARP 10.5 11.6 1.0 9.40
2.0 5.0 38.5 15.6
TA6F12A ATP 11.4 12.6 1.0 10.2
2.0 5.0 35.9 16.7
TA6F13A AVP 12.4 13.7 1.0 11.1
2.0 5.0 33.0 18.2
TA6F15A AXP 14.3 15.8 1.0 12.8 1.0 5.0 28.3 21.2
TA6F16A AZP 15.2 16.8 1.0 13.6 1.0 5.0 26.7 22.5
TA6F18A BEP 17.1 18.9 1.0 15.3 1.0 5.0 23.5 25.5
TA6F20A BGP 19.0 21.0 1.0 17.1 1.0 5.0 21.7 27.7
TA6F22A BKP 20.9 23.1 1.0 18.8 1.0 5.0 19.6 30.6
TA6F24A BMP 22.8 25.2 1.0 20.5 1.0 5.0 18.1 33.2
TA6F27A BPP 25.7 28.4 1.0 23.1 1.0 5.0 16.0 37.5
TA6F30A BRP 28.5 31.5 1.0 25.6 1.0 5.0 14.5 41.4
TA6F33A BTP 31.4 34.7 1.0 28.2 1.0 5.0 13.1 45.7
TA6F36A BVP 34.2 37.8 1.0 30.8 1.0 5.0 12.0 49.9
TA6F39A BXP 37.1 41.0 1.0 33.3 1.0 5.0 11.1 53.9
TA6F43A BZP 40.9 45.2 1.0 36.8 1.0
10.0 10.1 59.3
TA6F47A CEP 44.7 49.4 1.0 40.2 1.0
10.0 9.3 64.8
TA6F51A CGP 48.5 53.6 1.0 43.6 1.0
10.0 8.6 70.1
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient R
JA
(1)
145 °C/W
Typical thermal resistance, junction to mount R
JM
(2) 20 °C/W
IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS
(T
A
= 25 °C unless otherwise noted)
STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE
IEC 61000-4-2
Human body model (contact mode)
C = 150 pF, R = 330 V
C
4
> 8 kV
Human body model (air discharge mode) > 15 kV
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
TA6F6.8AHM3_A/H
(1)
0.032 H 3500 7" diameter plastic tape and reel
TA6F6.8AHM3_A/I
(1)
0.032 I 14 000 13" diameter plastic tape and reel
TA6F6.8A thru TA6F51A
www.vishay.com
Vishay General Semiconductor
Revision: 04-Nov-16
3
Document Number: 89939
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 3 - Pulse Waveform
Fig. 4 - Typical Junction Capacitance
Fig. 5 - Power Dissipation Derating Curve
Fig. 6 - Typical Transient Thermal Impedance
0.1
1
10
100
1 10 100 1000 10 000
P
PPM
- Peak Pulse Power (kW)
t
d
- Pulse Width (μs)
0
25
50
75
100
0 25 50 75 100 125 150 175 200
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
T
J
- Initial Temperature (° C)
0
0
50
100
150
1.0 2.0 3.0 4.0
t
r
= 10 μs
t
d
= 1000 μs
I
PPM
- Peak Pulse Current (% I
RSM
)
t - Time (ms)
t
d
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
T
J
= 25 °C
Pulse Width (t
d
) is
dened as the Point
Where the Peak Current
decays to 50 % of I
PPM
10
100
1000
10 000
1 10 100
C
J
- Junction Capacitance (pF)
V
BR
- Break-down Voltage (V)
Measured at Stand-off
Voltage, V
WM
Measured at Zero Bias
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0
1
2
3
4
5
6
7
0 25 50 75 100 125 150 175 200
P
D
- Power Dissipation (W)
T
A
- Ambient Temperature (°C)
FR-4 Board, on Minimum
Recommended Pad Layout
T
A
=T
M
, mounted on ininite
heatsink
1
10
100
1000
0.01 0.1 1 10 100 1000
Transient Thermal Impedance (°C/W)
t
p
- Pulse Duration (s)
P1-P3P4-P5

TA6F13AHM3_A/H

Mfr. #:
Buy TA6F13AHM3_A/H
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors High Temp DO-221AC AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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