RJH60D7DPM-00#T1 Datasheet RJH60D7DPM-00#T1 | P1-P3

R07DS0176EJ0400 Rev.4.00 Page 1 of 9

Dec 07, 2012

Preliminary Datasheet

RJH60D7DPM

600V - 50A - IGBT

Application: Inverter

Features

 Short circuit withstand time (5 s typ.)

 Low collector to emitter saturation voltage

V

CE(sat)

= 1.6 V typ. (at I

C

= 50 A, V

GE

= 15 V, Ta = 25°C)

 Built in fast recovery diode (100 ns typ.) in one package

 Trench gate and thin wafer technology

 High speed switching

t

f

= 50 ns typ. (at V

CC

= 300 V, V

GE

= 15 V, I

C

= 50 A, Rg = 5 , Ta = 25°C, inductive load)

Outline

RENESAS Package code: PRSS0003ZA-A

(Package name: TO-3PFM)

1

2

3

1. Gate

2. Collecto

r

3. Emitter

C

G

E

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage / diode reverse voltage V

CES

/ V

R

600 V

Gate to emitter voltage V

GES

±30 V

Tc = 25°C I

C

90 A Collector current

Tc = 100°C I

C

50 A

Collector peak current ic(peak)

Note1

200 A

Collector to emitter diode forward current i

DF

30 A

Collector to emitter diode forward peak current i

DF

(peak)

Note1

120 A

Collector dissipation P

C

Note2

55 W

Junction to case thermal resistance (IGBT) j-c

Note2

2.27 °C/ W

Junction to case thermal resistance (Diode) j-cd

Note2

3.95 °C/ W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

R07DS0176EJ0400

Rev.4.00

Dec 07, 2012

RJH60D7DPM Preliminary

R07DS0176EJ0400 Rev.4.00 Page 2 of 9

Dec 07, 2012

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Collector to emitter breakdown

voltage

V

BR(CES)

600 — — V I

C

=10 A, V

GE

= 0

Zero gate voltage collector current

/ Diode reverse current

I

CES

/ I

R

— — 5 A V

CE

= 600 V, V

GE

= 0

Gate to emitter leak current I

GES

— — ±1 A V

GE

= ±30 V, V

CE

= 0

Gate to emitter cutoff voltage V

GE(off)

4.0 — 6.0 V V

CE

= 10 V, I

C

= 1 mA

V

CE(sat)

— 1.6 2.2 V I

C

= 50 A, V

GE

= 15 V

Note3

Collector to emitter saturation voltage

V

CE(sat)

— 1.8 — V I

C

= 90 A, V

GE

= 15 V

Note3

Input capacitance Cies — 3000 — pF

Output capacitance Coes — 160 — pF

Reveres transfer capacitance Cres — 85 — pF

V

CE

= 25 V

V

GE

= 0

f = 1 MHz

Total gate charge Qg — 130 — nC

Gate to emitter charge Qge — 20 — nC

Gate to collector charge Qgc — 45 — nC

V

GE

= 15 V

V

CE

= 300 V

I

C

= 50 A

Turn-on delay time t

d(on)

— 60 — ns

Rise time t

r

— 46 — ns

Turn-off delay time t

d(off)

— 190 — ns

Fall time t

f

— 50 — ns

Turn-on energy E

on

— 1.1 — mJ

Turn-off energy E

off

— 0.6 — mJ

Total switching energy E

total

— 1.7 — mJ

V

CC

= 300 V

V

GE

= 15 V

I

C

= 50 A

Rg = 5 

(Inductive load)

Short circuit withstand time t

sc

3.0 5.0 — s V

CC

 360 V, V

GE

= 15 V

FRD forward voltage V

F

— 1.4 1.9 V I

F

= 30 A

Note3

FRD reverse recovery time t

rr

— 100 — ns

FRD reverse recovery charge Q

rr

— 0.18 — C

FRD peak reverse recovery current I

rr

— 4.2 — A

I

F

= 30 A

di

F

/dt = 100 A/s

Notes: 3. Pulse test

RJH60D7DPM Preliminary

R07DS0176EJ0400 Rev.4.00 Page 3 of 9

Dec 07, 2012

Main Characteristics

Typical Output Characteristics

Collector Current I

C

(A)

Collector to Emitter Voltage V

CE

(V)

Collector Current I

C

(A)

Collector to Emitter Voltage V

CE

(V)

Maximum Safe Operation Area

Typical Output Characteristics

Collector Current I

C

(A)

Collector to Emitter Voltage V

CE

(V)

Collector Current I

C

(A)

Collector to Emitter Voltage V

CE

(V)

Turn-off SOA

80

60

40

20

0

Collector Current I

C

(A)

Case Temperature Tc (°C)

Maximum DC Collector Current vs.

Case Temperature

120

80

60

40

20

0

02550 10075 125 150

17502550 10075 125 150 175

Collector Dissipation Pc (W)

Case Temperature Tc (°C)

Collector Dissipation vs.

Case Temperature

100

160

200

120

80

40

12345

0

Pulse Test

Tc = 25

°

C

V

GE

= 8 V

9 V

10 V

12 V

15 V

160

200

120

80

40

12345

0

9 V

10 V

12 V

15 V

Pulse Test

Tc = 150

°

C

V

GE

= 8 V

1000

100

1

10

0.1

110010

1000

Tc = 25°C

Single pulse

100 μs

PW = 10 μs

0 200 400 600 800

300

250

200

150

100

50

0

RJH60D7DPM-00#T1

RJH60D7DPM-00#T1

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